公开(公告)号：US09490202B2

公开(公告)日：2016-11-08

申请号：US14505087

申请日：2014-10-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： Qinghuang Lin ,  Benjamin L. Fletcher ,  Cyril Cabral

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/00 ,  H01L23/522 ,  H01L23/482 ,  H01L23/528 ,  H01L23/00 ,  H01L21/311 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/5222 ,  H01L21/31127 ,  H01L21/7682 ,  H01L21/76885 ,  H01L23/4821 ,  H01L23/528 ,  H01L23/53295 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Devices and methods for forming a self-aligned airgap interconnect structure includes etching a conductive layer to a substrate to form conductive structures with patterned gaps and filling the gaps with a sacrificial material. The sacrificial material is planarized to expose a top surface of the conductive layer. A permeable cap layer is deposited over the conductive structure and the sacrificial material, Self-aligned airgaps are formed by removing the sacrificial material through the permeable layer.

Abstract translation: 用于形成自对准气隙互连结构的装置和方法包括将导电层蚀刻到衬底以形成具有图案化间隙的导电结构并用牺牲材料填充间隙。 将牺牲材料平坦化以暴露导电层的顶表面。 在导电结构和牺牲材料上沉积可渗透盖层，通过可渗透层去除牺牲材料形成自对准气囊。