Invention Grant
- Patent Title: Method for producing an optoelectronic semiconductor device, and optoelectronic semiconductor device
- Patent Title (中): 光电子半导体器件的制造方法以及光电半导体器件
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Application No.: US14654500Application Date: 2013-12-17
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Publication No.: US09490397B2Publication Date: 2016-11-08
- Inventor: Stephan Preuβ , Michael Zitzlsperger , Caroline Kistner
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater Matsil, LLP
- Priority: DE102012113003 20121221
- International Application: PCT/EP2013/076977 WO 20131217
- International Announcement: WO2014/095923 WO 20140624
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L33/48 ; H01L33/60 ; H01L33/62 ; H01L33/54 ; H01L23/00 ; H01L33/50

Abstract:
A method for producing an optoelectronic thin-film chip semiconductor device is specified. A conductor structure is applied on a carrier and a multiplicity of optoelectronic semiconductor chips are arranged between the conductor structures. Each of the optoelectronic semiconductor chips includes a layer at a top side. Furthermore, electrical connections between semiconductor chip and the conductor structure are established, for instance using a bonding wire. The semiconductor chips and the conductor structure are surrounded with a molded body. The molded body does not project beyond the optoelectronic semiconductor chips at the top side thereof facing away from the carrier. Moreover, the carrier is removed and the semiconductor chips surrounded by molding are singulated.
Public/Granted literature
- US20150333232A1 Method for Producing an Optoelectronic Semiconductor Device, and Optoelectronic Semiconductor Device Public/Granted day:2015-11-19
Information query
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