Invention Grant
- Patent Title: Trench MOSFET having reduced gate charge
- Patent Title (中): 具有减小栅极电荷的沟槽MOSFET
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Application No.: US15069089Application Date: 2016-03-14
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Publication No.: US09496388B2Publication Date: 2016-11-15
- Inventor: Thomas Eugene Grebs , Touhidur Rahman , Christopher Boguslaw Kocon
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Tuenlap D. Chan; Frank D. Cimino
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/06 ; H01L29/861 ; H01L29/10 ; H01L29/40 ; H01L29/423 ; H01L29/417
Abstract:
A trench MOSFET device includes a semiconductor layer of a first doping type. MOS transistor cells are in a body region of a second doping type in the semiconductor layer. The transistor cells include a first cell type including a first trench providing a first gate electrode or the first gate electrode is on the semiconductor surface between the first trench and a second trench, and a first source region is formed in the body region. The first gate electrode is electrically isolated from the first source region. A second cell type has a third trench providing a second gate electrode or the second gate electrode is on the semiconductor surface between the third trench and a fourth trench, and a second source region is in the body region. An electrically conductive member directly connects the second gate electrode, first source region and second source region together.
Public/Granted literature
- US20160197178A1 Trench MOSFET Having Reduced Gate Charge Public/Granted day:2016-07-07
Information query
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