Invention Grant
US09496431B2 Coplanar integration of a direct-bandgap chip into a silicon photonic device 有权
将直接带隙芯片共面整合到硅光子器件中

Coplanar integration of a direct-bandgap chip into a silicon photonic device
Abstract:
A method for fabricating a composite device comprises providing a platform, providing a chip, and bonding the chip to the platform. The platform has a base layer and a device layer above the base layer. An opening in the device layer exposes a portion of the base layer. The chip is bonded to the portion of the base layer exposed by the opening in the device layer. A portion of the chip extends above the platform and is removed.
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