Invention Grant
- Patent Title: Deposition of conformal films by atomic layer deposition and atomic layer etch
- Patent Title (中): 通过原子层沉积和原子层蚀刻沉积保形膜
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Application No.: US14678736Application Date: 2015-04-03
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Publication No.: US09502238B2Publication Date: 2016-11-22
- Inventor: Michal Danek , Jon Henri , Shane Tang
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/02 ; C23C16/455 ; C23C16/505 ; H01J37/32 ; C23C16/52 ; H01L21/67
Abstract:
Methods for depositing conformal films using a halogen-containing etchant during atomic layer deposition are provided. Methods involve exposing a substrate to a halogen-containing etchant such as nitrogen trifluoride between exposing the substrate to a first precursor and exposing the substrate to a second plasma-activated reactant. Examples of conformal films that may be deposited include silicon-containing films and metal-containing films. Related apparatuses are also provided.
Public/Granted literature
- US20160293398A1 DEPOSITION OF CONFORMAL FILMS BY ATOMIC LAYER DEPOSITION AND ATOMIC LAYER ETCH Public/Granted day:2016-10-06
Information query
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