公开(公告)号：US12230495B2

公开(公告)日：2025-02-18

申请号：US17285814

申请日：2019-10-11

Applicant: Lam Research Corporation

Inventor： James S. Sims ,  Shane Tang ,  Vikrant Rai ,  Andrew McKerrow ,  Huatan Qiu

IPC: H01L21/02 ,  C23C16/455 ,  H01J37/32 ,  H01L21/67

Abstract: A method for depositing a silicon nitride layer on a stack is provided. The method comprises providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises dosing the stack with a silicon containing precursor by providing a silicon containing precursor gas, providing an N2 plasma conversion, and providing an H2 plasma conversion.

公开(公告)号：US11239420B2

公开(公告)日：2022-02-01

申请号：US16112503

申请日：2018-08-24

Applicant: Lam Research Corporation

Inventor： James Samuel Sims ,  Andrew John McKerrow ,  Meihua Shen ,  Thorsten Lill ,  Shane Tang ,  Kathryn Merced Kelchner ,  John Hoang ,  Alexander Dulkin ,  Danna Qian ,  Vikrant Rai

IPC: H01L21/02 ,  H01L45/00 ,  H01L21/67 ,  H01L43/12 ,  C23C16/34 ,  C23C16/509 ,  C23C16/455

Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.

公开(公告)号：US20180138028A1

公开(公告)日：2018-05-17

申请号：US15847744

申请日：2017-12-19

Applicant: Lam Research Corporation

Inventor： Jon Henri ,  Dennis M. Hausmann ,  Bart J. van Schravendijk ,  Shane Tang ,  Karl F. Leeser

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/52 ,  C23C16/50

CPC classification number: H01L21/0228 ,  C23C16/04 ,  C23C16/045 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/0262

Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.

公开(公告)号：US09564312B2

公开(公告)日：2017-02-07

申请号：US14552011

申请日：2014-11-24

Applicant: Lam Research Corporation

Inventor： Jon Henri ,  Dennis M. Hausmann ,  Bart J. van Schravendijk ,  Shane Tang ,  Karl F. Leeser

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/52 ,  C23C16/50

CPC classification number: H01L21/0228 ,  C23C16/04 ,  C23C16/045 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/0262

Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.

Abstract translation: 提供了选择性地抑制通过原子层沉积沉积的含硅膜沉积的方法。 选择性抑制包括将含硅前体的吸附层暴露于含氢抑制剂，并且在一些情况下，在将吸附层暴露于第二反应物之前。 可以用等离子体进行暴露于含氢抑制剂，并且方法适合于选择性抑制含硅薄膜的热或等离子体增强的原子层沉积。

公开(公告)号：US20140113457A1

公开(公告)日：2014-04-24

申请号：US14144107

申请日：2013-12-30

Applicant: Lam Research Corporation

Inventor： James S. Sims ,  Jon Henri ,  Kathryn M. Kelchner ,  Sathish Babu S. V. Janjam ,  Shane Tang

IPC: H01L21/02 ,  C23C16/515

CPC classification number: H01L21/0217 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/515 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76829

Abstract: The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasmas. While conventional PEALD processes use continuous wave plasmas during the plasma exposure/conversion operation, the embodiments herein utilize a pulsed plasma during this operation to achieve a film with high quality sidewalls. Because conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls, this increased sidewall quality in the disclosed methods corresponds to a film that is overall more uniform in quality compared to that achieved with conventional continuous wave plasma techniques.

Abstract translation: 本文的实施例集中于使用脉冲等离子体的等离子体增强原子层沉积（PEALD）工艺。 虽然常规PEALD工艺在等离子体曝光/转换操作期间使用连续波等离子体，但是本文的实施例在此操作期间利用脉冲等离子体来实现具有高质量侧壁的膜。 因为常规的PEALD技术导致在特征的底部和顶部具有高质量但在侧壁上质量较差的膜，因此在所公开的方法中增加的侧壁质量对应于整体上在质量上更均匀的膜， 常规连续波等离子体技术。

公开(公告)号：US11832533B2

公开(公告)日：2023-11-28

申请号：US17645178

申请日：2021-12-20

Applicant: Lam Research Corporation

Inventor： James Samuel Sims ,  Andrew John McKerrow ,  Meihua Shen ,  Thorsten Lill ,  Shane Tang ,  Kathryn Merced Kelchner ,  John Hoang ,  Alexander Dulkin ,  Danna Qian ,  Vikrant Rai

IPC: H10N70/00 ,  H01L21/67 ,  H01L21/02 ,  C23C16/34 ,  C23C16/509 ,  C23C16/455 ,  H10N50/01 ,  H10N70/20 ,  H10N50/00

CPC classification number: H10N70/011 ,  C23C16/34 ,  C23C16/4554 ,  C23C16/509 ,  H01L21/022 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/67167 ,  H10N50/00 ,  H10N70/231 ,  H10N70/826 ,  H10N70/882

Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.

公开(公告)号：US10804099B2

公开(公告)日：2020-10-13

申请号：US15847744

申请日：2017-12-19

Applicant: Lam Research Corporation

Inventor： Jon Henri ,  Dennis M. Hausmann ,  Bart J. van Schravendijk ,  Shane Tang ,  Karl F. Leeser

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/52 ,  C23C16/50 ,  C23C16/04

Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.

公开(公告)号：US20200066987A1

公开(公告)日：2020-02-27

申请号：US16112503

申请日：2018-08-24

Applicant: Lam Research Corporation

Inventor： James Samuel Sims ,  Andrew John McKerrow ,  Meihua Shen ,  Thorsten Lill ,  Shane Tang ,  Kathryn Merced Kelchner ,  John Hoang ,  Alexander Dulkin ,  Danna Qian ,  Vikrant Rai

IPC: H01L45/00 ,  H01L21/02 ,  H01L21/67

Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.

公开(公告)号：US09875891B2

公开(公告)日：2018-01-23

申请号：US15399637

申请日：2017-01-05

Applicant: Lam Research Corporation

Inventor： Jon Henri ,  Dennis M. Hausmann ,  Bart J. van Schravendijk ,  Shane Tang ,  Karl F. Leeser

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52

CPC classification number: H01L21/0228 ,  C23C16/04 ,  C23C16/045 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/0262

Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.

公开(公告)号：US09502238B2

公开(公告)日：2016-11-22

申请号：US14678736

申请日：2015-04-03

Applicant: Lam Research Corporation

Inventor： Michal Danek ,  Jon Henri ,  Shane Tang

IPC: H01L21/311 ,  H01L21/02 ,  C23C16/455 ,  C23C16/505 ,  H01J37/32 ,  C23C16/52 ,  H01L21/67

CPC classification number: H01L21/0228 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32091 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/0234 ,  H01L21/67069 ,  H01L21/67201 ,  H01L21/67207

Abstract: Methods for depositing conformal films using a halogen-containing etchant during atomic layer deposition are provided. Methods involve exposing a substrate to a halogen-containing etchant such as nitrogen trifluoride between exposing the substrate to a first precursor and exposing the substrate to a second plasma-activated reactant. Examples of conformal films that may be deposited include silicon-containing films and metal-containing films. Related apparatuses are also provided.

Abstract translation: 提供了在原子层沉积期间使用含卤素蚀刻剂沉积保形膜的方法。 方法包括在将衬底暴露于第一前体之前将衬底暴露于含卤素蚀刻剂如三氟化氮，并将衬底暴露于第二等离子体活化反应物。 可以沉积的保形膜的实例包括含硅膜和含金属膜。 还提供了相关装置。