Invention Grant
- Patent Title: Method for manufacturing a front electrode of a semiconductor device
- Patent Title (中): 半导体装置的前电极的制造方法
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Application No.: US15155199Application Date: 2016-05-16
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Publication No.: US09508877B2Publication Date: 2016-11-29
- Inventor: Xiaoli Liu , Delin Li
- Applicant: Xiaoli Liu , Delin Li
- Applicant Address: CN ShenZhen
- Assignee: Soltrium Advanced Materials Technology
- Current Assignee: Soltrium Advanced Materials Technology
- Current Assignee Address: CN ShenZhen
- Agent Fang Wu
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/0224 ; H01L31/0216 ; H01L31/028 ; H01L31/068 ; H01L31/18

Abstract:
The present invention provides a method for manufacturing a front electrode of a semiconductor device. The method includes using an electrically conductive paste composed of a glass-free corrosion binder, a metallic powder and an organic carrier. The corrosion binder is one or more Pb—Te based crystalline compounds having a fixed melting temperature in a range of 440° C. to 760° C. During a sintering process of the electrically conductive paste for forming an electrode, the glass-free corrosion binder is converted into a liquid for easily corroding and penetrating an antireflective insulating layer on a front side of the solar cell, so that a good ohmic contact is formed. At the same time, the electrically conductive metallic powder is wetted, and the combination of the metallic powder is promoted. As a result, a high-conductivity front electrode of a crystalline silicon solar cell is formed.
Public/Granted literature
- US20160260851A1 METHOD FOR MANUFACTURING A FRONT ELECTRODE OF A SEMICONDUCTOR DEVICE Public/Granted day:2016-09-08
Information query
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