Invention Grant
US09514813B2 Resistive memory device, resistive memory system, and operating method thereof 有权
电阻式存储器件,电阻式存储器系统及其操作方法

Resistive memory device, resistive memory system, and operating method thereof
Abstract:
A method for operating a memory device includes sensing a temperature of the resistive memory device, setting a level of a set voltage or current for writing to a memory cell based on the temperature, setting a level of a reset voltage for reset writing to the memory cell based on the temperature, and performing a write operation on the memory cell based on the level of the set voltage or current and the level of the reset voltage. The memory device may be a resistive memory device.
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