Invention Grant
US09514813B2 Resistive memory device, resistive memory system, and operating method thereof
有权
电阻式存储器件,电阻式存储器系统及其操作方法
- Patent Title: Resistive memory device, resistive memory system, and operating method thereof
- Patent Title (中): 电阻式存储器件,电阻式存储器系统及其操作方法
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Application No.: US14724909Application Date: 2015-05-29
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Publication No.: US09514813B2Publication Date: 2016-12-06
- Inventor: Yong-kyu Lee , Yeong-taek Lee , Dae-seok Byeon , In-gyu Baek , Man Chang , Lijie Zhang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2014-0132496 20141001
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C7/04 ; G11C11/16

Abstract:
A method for operating a memory device includes sensing a temperature of the resistive memory device, setting a level of a set voltage or current for writing to a memory cell based on the temperature, setting a level of a reset voltage for reset writing to the memory cell based on the temperature, and performing a write operation on the memory cell based on the level of the set voltage or current and the level of the reset voltage. The memory device may be a resistive memory device.
Public/Granted literature
- US20160099052A1 RESISTIVE MEMORY DEVICE, RESISTIVE MEMORY SYSTEM, AND OPERATING METHOD THEREOF Public/Granted day:2016-04-07
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