公开(公告)号：US09184218B2

公开(公告)日：2015-11-10

申请号：US14506005

申请日：2014-10-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Lijie Zhang ,  Young-Bae Kim ,  Youn-Seon Kang ,  In-Gyu Baek ,  Masayuki Terai

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/249 ,  H01L27/2454 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/146

Abstract: A semiconductor memory device includes pillars extending upright on a substrate in a direction perpendicular to the substrate, a stack disposed on the substrate and constituted by a first interlayer insulating layer, a first conductive layer, a second interlayer insulating layer, and a second conductive layer, a variable resistance layer interposed between the pillars and the first conductive layer, and an insulating layer interposed between the first pillars and the second conductive layer.

Abstract translation: 半导体存储器件包括在垂直于衬底的方向上在衬底上直立延伸的柱，设置在衬底上并由第一层间绝缘层，第一导电层，第二层间绝缘层和第二导电层 插入在所述柱和所述第一导电层之间的可变电阻层以及插在所述第一柱和所述第二导电层之间的绝缘层。

公开(公告)号：US09728252B2

公开(公告)日：2017-08-08

申请号：US14796131

申请日：2015-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-kyu Lee ,  Yeong-taek Lee ,  Dae-seok Byeon ,  In-gyu Baek ,  Man Chang ,  Lijie Zhang ,  Hyun-kook Park

IPC: G11C7/04 ,  G11C13/00 ,  G11C11/56 ,  G11C11/16

CPC classification number: G11C13/004 ,  G11C7/04 ,  G11C11/1673 ,  G11C11/5607 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/0064 ,  G11C2013/0054

Abstract: A method for operating a memory device includes sensing a change in temperature of the memory device, adjusting a level of a reference current for a read operation, and reading data from memory cells of the memory device based on the adjusted level of the reference current. The level of the reference current is adjusted from a reference value to a first value when the temperature of the memory device increases and is adjusted from the reference value to a second value when the temperature of the memory device decreases. A difference between the reference value and the first value is different from a difference the reference value and the second value.

公开(公告)号：US09514813B2

公开(公告)日：2016-12-06

申请号：US14724909

申请日：2015-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-kyu Lee ,  Yeong-taek Lee ,  Dae-seok Byeon ,  In-gyu Baek ,  Man Chang ,  Lijie Zhang

IPC: G11C11/00 ,  G11C13/00 ,  G11C7/04 ,  G11C11/16

CPC classification number: G11C13/0069 ,  G11C7/04 ,  G11C11/1659 ,  G11C11/1675 ,  G11C13/0097 ,  G11C2013/0073 ,  G11C2013/0088 ,  G11C2013/0092

Abstract: A method for operating a memory device includes sensing a temperature of the resistive memory device, setting a level of a set voltage or current for writing to a memory cell based on the temperature, setting a level of a reset voltage for reset writing to the memory cell based on the temperature, and performing a write operation on the memory cell based on the level of the set voltage or current and the level of the reset voltage. The memory device may be a resistive memory device.

Abstract translation: 一种用于操作存储器件的方法包括：感测电阻性存储器件的温度，根据温度设置用于写入存储器单元的设定电压或电流的电平，设置用于复位写入的复位电压的电平到存储器 基于温度，并且基于设定电压或电流的电平以及复位电压的电平对存储器单元执行写入操作。 存储器件可以是电阻式存储器件。