Invention Grant
US09518151B2 Low dielectric constant polymer containing dinaphthyl and hexafluorocyclobutyl ether unit, preparation method and use
有权
含有二萘基和六氟环丁基醚单元的低介电常数聚合物,制备方法和用途
- Patent Title: Low dielectric constant polymer containing dinaphthyl and hexafluorocyclobutyl ether unit, preparation method and use
- Patent Title (中): 含有二萘基和六氟环丁基醚单元的低介电常数聚合物,制备方法和用途
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Application No.: US14785522Application Date: 2013-11-20
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Publication No.: US09518151B2Publication Date: 2016-12-13
- Inventor: Qiang Fang , Chao Yuan , Kaikai Jin , Yingchun Liu , Shen Diao , Kai Li
- Applicant: SHANGHAI INSTITUTE OF ORGANIC CHEMISTRY, CHINESE ACADEMY OF SCIENCES
- Applicant Address: CN Shanghai
- Assignee: Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences
- Current Assignee: Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences
- Current Assignee Address: CN Shanghai
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: CN201310138980 20130419
- International Application: PCT/CN2013/087543 WO 20131120
- International Announcement: WO2014/169651 WO 20141023
- Main IPC: C08G65/38
- IPC: C08G65/38 ; C08G65/40 ; C07C41/30 ; C08G61/12 ; H01L51/05 ; C07C41/16 ; C07C41/24 ; C07C41/09 ; C07C43/247 ; C09D171/12 ; C08G2/00

Abstract:
The present invention belongs to the field of preparation of high performance polymers, and specifically relates to a low dielectric constant polymer containing dinaphthyl and hexafluorocyclobutyl ether units, and preparation method and use thereof. The polymer is prepared as follows: under the effect of an alkali, 1-naphthol bromotetrafluoroethane ether is prepared from 1-naphthol and tetrafluorodibromoethane in an organic solvent, and then reduced by a zinc powder so as to obtain 1-naphthol trifluorovinyl ether. 1-naphthol trifluorovinyl ether is treated at a high temperature to obtain a bisnaphthol hexafluorocyclobutyl ether monomer. The monomer is subjected to oxidative coupling in the presence of ferric trichloride so as to obtain a thermal polymer containing dinaphthyl and hexafluorocyclobutyl structural units with a good film-forming property, and in a nitrogen atmosphere, the temperature for 5% weight loss (Td5%) of the obtained film is 437° C., and the carbon residue yield at 1000° C. is 54.24%. The dielectric constant (30 MHz) of the film is 2.33. The polymer is suitable for use in the electronic and electrical industries as an insulation coating layer and an encapsulating material for electron components.
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