Invention Grant
- Patent Title: Semiconductor device comprising an e-fuse and a FET
- Patent Title (中): 包括e-fuse和FET的半导体器件
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Application No.: US14136581Application Date: 2013-12-20
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Publication No.: US09524962B2Publication Date: 2016-12-20
- Inventor: Andrei Sidelnicov , Andreas Kurz , Alexandru Romanescu
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L23/62 ; H01L21/285 ; H01L27/06 ; H01L23/525 ; H01L29/51 ; H01L29/66

Abstract:
A method of forming a semiconductor device including the steps of forming an electrically programmable fuse (e-fuse) on an isolation region and a transistor on an active region of a wafer, wherein forming the transistor includes forming a dummy gate above a substrate, removing the dummy gate and forming a metal gate in place of the dummy gate, and forming the e-fuse includes forming a metal-containing layer above the isolation region, forming a semiconductor layer on the metal-containing layer during the process of forming the dummy gate and of the same material as the dummy gate, forming a hard mask layer on the semiconductor layer formed on the metal-containing layer, and forming contact openings in the hard mask layer and semiconductor layer during the process of removing the dummy gate.
Public/Granted literature
- US20150179632A1 SEMICONDUCTOR DEVICE COMPRISING AN E-FUSE AND A FET Public/Granted day:2015-06-25
Information query
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