Invention Grant
- Patent Title: Restoring OFF-state stress degradation of threshold voltage
- Patent Title (中): 恢复阈值电压的OFF状态应力退化
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Application No.: US14570592Application Date: 2014-12-15
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Publication No.: US09531371B2Publication Date: 2016-12-27
- Inventor: Alessio Spessot , Moon Ju Cho
- Applicant: IMEC VZW
- Applicant Address: BE Leuven
- Assignee: IMEC VZW
- Current Assignee: IMEC VZW
- Current Assignee Address: BE Leuven
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Priority: EP13197303 20131213
- Main IPC: H03K3/011
- IPC: H03K3/011 ; H03K17/16 ; H03K17/14 ; H03K17/687 ; G01R31/26

Abstract:
A method for at least partially compensating for a change in threshold voltage level of a FET transistor induced by OFF-state stress degradation includes determining a signal indicative of a change in threshold voltage level of the FET with respect to a reference threshold voltage level, and applying a restoration signal to the FET. This restoration signal is adapted for shifting the threshold voltage level of the FET in a direction having opposite sign with respect to the change in threshold voltage level. Applying the restoration signal further includes taking into account the signal indicative of the change in threshold voltage level.
Public/Granted literature
- US20150171857A1 Restoring OFF-State Stress Degradation of Threshold Voltage Public/Granted day:2015-06-18
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