Invention Grant
- Patent Title: Wet clean process for removing CxHyFz etch residue
- Patent Title (中): 用于清洁CxHyFz蚀刻残留物的湿清洁工艺
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Application No.: US14523515Application Date: 2014-10-24
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Publication No.: US09536731B2Publication Date: 2017-01-03
- Inventor: Robert L. Bruce , Sebastian U. Engelmann , Eric A. Joseph , Mahmoud Khojasteh , Masahiro Nakamura , Satyavolu S. Papa Rao , Bang N. To , George G. Totir , Yu Zhu
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , Zeon Corporation
- Applicant Address: US NY Armonk JP Tokyo
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,ZEON CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,ZEON CORPORATION
- Current Assignee Address: US NY Armonk JP Tokyo
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/02 ; H01L21/28 ; H01L21/311 ; C11D11/00 ; C11D7/10
Abstract:
A method for cleaning etch residues that may include treating an etched surface with an aqueous lanthanoid solution, wherein the aqueous lanthanoid solution removes an etch residue that includes a majority of hydrocarbons and at least one element selected from the group consisting of carbon, oxygen, fluorine, nitrogen and silicon. In one example, the aqueous solution may be cerium ammonium nitrate (Ce(NH4)(NO3)),(CAN).
Public/Granted literature
- US20150118839A1 WET CLEAN PROCESS FOR REMOVING CxHyFz ETCH RESIDUE Public/Granted day:2015-04-30
Information query
IPC分类:
