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US09543041B2 Configuration and testing for magnetoresistive memory to ensure long term continuous operation 有权
磁阻存储器的配置和测试,以确保长期连续运行

Configuration and testing for magnetoresistive memory to ensure long term continuous operation
Abstract:
Techniques and circuits for testing and configuring magnetic memory devices are presented. Registers and nonvolatile storage is included on the memory devices for storing values used to control testing of the memory devices as well as for configuring parameters related to both testing and normal operation. Examples include adjustment of bias voltages, sense amplifier offset values, and timing parameters to improve the efficiency of testing operations as well as improve reliability and speed of normal operation.
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