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1.发明授权Configuration and testing for magnetoresistive memory to ensure long term continuous operation 有权磁阻存储器的配置和测试，以确保长期连续运行公开(公告)号：US09543041B2
公开(公告)日：2017-01-10
申请号：US14837381
申请日：2015-08-27
CPC分类号： G11C11/1673 , G11C11/16 , G11C11/1675 , G11C17/16 , G11C29/021 , G11C29/023 , G11C29/026 , G11C29/028 , G11C29/12 , G11C29/50
摘要： Techniques and circuits for testing and configuring magnetic memory devices are presented. Registers and nonvolatile storage is included on the memory devices for storing values used to control testing of the memory devices as well as for configuring parameters related to both testing and normal operation. Examples include adjustment of bias voltages, sense amplifier offset values, and timing parameters to improve the efficiency of testing operations as well as improve reliability and speed of normal operation.
摘要翻译： 介绍了用于测试和配置磁存储器件的技术和电路。 寄存器和非易失性存储器包含在存储器件中，用于存储用于控制存储器件测试的值以及用于配置与测试和正常操作相关的参数。 示例包括偏置电压的调整，读出放大器偏移值和定时参数，以提高测试操作的效率，以及提高正常操作的可靠性和速度。
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公开(公告)号：US20160064058A1
公开(公告)日：2016-03-03
申请号：US14837381
申请日：2015-08-27
CPC分类号： G11C11/1673 , G11C11/16 , G11C11/1675 , G11C17/16 , G11C29/021 , G11C29/023 , G11C29/026 , G11C29/028 , G11C29/12 , G11C29/50
摘要： Techniques and circuits for testing and configuring magnetic memory devices are presented. Registers and nonvolatile storage is included on the memory devices for storing values used to control testing of the memory devices as well as for configuring parameters related to both testing and normal operation. Examples include adjustment of bias voltages, sense amplifier offset values, and timing parameters to improve the efficiency of testing operations as well as improve reliability and speed of normal operation.
摘要翻译： 介绍了用于测试和配置磁存储器件的技术和电路。 寄存器和非易失性存储器包含在存储器件中，用于存储用于控制存储器件测试的值以及用于配置与测试和正常操作相关的参数。 示例包括偏置电压的调整，读出放大器偏移值和定时参数，以提高测试操作的效率，以及提高正常操作的可靠性和速度。
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公开(公告)号：US10262713B2
公开(公告)日：2019-04-16
申请号：US15401235
申请日：2017-01-09
摘要： Techniques and circuits for testing and configuring bias voltage or bias current for write operations in memory devices are presented. Registers and nonvolatile storage is included on the memory devices for storing values used to control testing of the memory devices as well as for configuring parameters related to both testing and normal operation.
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公开(公告)号：US20170117029A1
公开(公告)日：2017-04-27
申请号：US15401235
申请日：2017-01-09
CPC分类号： G11C11/1673 , G11C11/16 , G11C11/1675 , G11C17/16 , G11C29/021 , G11C29/023 , G11C29/026 , G11C29/028 , G11C29/12 , G11C29/50
摘要： Techniques and circuits for testing and configuring bias voltage or bias current for write operations in memory devices are presented. Registers and nonvolatile storage is included on the memory devices for storing values used to control testing of the memory devices as well as for configuring parameters related to both testing and normal operation.
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公开(公告)号：US10923170B2
公开(公告)日：2021-02-16
申请号：US16358414
申请日：2019-03-19
摘要： Techniques and circuits for testing and configuring bias voltage or bias current for write operations in memory devices are presented. Registers and nonvolatile storage is included on the memory devices for storing values used to control testing of the memory devices as well as for configuring parameters related to both testing and normal operation.
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