Invention Grant
- Patent Title: Low-K spacer for RMG finFET formation
- Patent Title (中): 用于RMG finFET形成的低K间隔物
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Application No.: US14191751Application Date: 2014-02-27
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Publication No.: US09543407B2Publication Date: 2017-01-10
- Inventor: Hong He , Chiahsun Tseng , Tenko Yamashita , Chun-Chen Yeh , Yunpeng Yin
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/08 ; H01L29/78
Abstract:
A method for semiconductor fabrication includes providing mask layers on opposite sides of a substrate, the substrate having one or more mandrels. Dummy spacers are formed along a periphery of the mask layers. A dummy gate structure is formed between the dummy spacers. The dummy spacers are removed to provide a recess. Low-k spacers are formed in the recess.
Public/Granted literature
- US20150243760A1 LOW-K SPACER FOR RMG FINFET FORMATION Public/Granted day:2015-08-27
Information query
IPC分类:
