Invention Grant
- Patent Title: Multi-die DRAM banks arrangement and wiring
- Patent Title (中): 多芯片DRAM库布局和布线
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Application No.: US14807786Application Date: 2015-07-23
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Publication No.: US09548102B2Publication Date: 2017-01-17
- Inventor: Thomas Vogelsang
- Applicant: Rambus Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: RAMBUS INC.
- Current Assignee: RAMBUS INC.
- Current Assignee Address: US CA Sunnyvale
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C11/4093 ; G11C11/408 ; G11C5/06 ; G11C8/12

Abstract:
The various embodiments described herein include memory dies and methods for memory die communications. In one aspect, a method is performed at a first memory die with a plurality of memory banks and a plurality of contacts. The method includes: (1) coupling a first memory bank of the plurality of memory banks to a second memory die via the plurality of contacts; (2) transmitting data between the first memory bank and the second memory die via the plurality of contacts; and (3) receiving a control signal to couple a second memory bank of the plurality of memory banks to the second memory die. The method further includes, in response to receiving the control signal, coupling the second memory bank to the second memory die via the plurality of contacts; and transmitting data between the second memory bank and the second memory die via the plurality of contacts.
Public/Granted literature
- US20150348613A1 Multi-Die DRAM Banks Arrangement and Wiring Public/Granted day:2015-12-03
Information query