Invention Grant
- Patent Title: Extreme high mobility CMOS logic
- Patent Title (中): 极高移动性CMOS逻辑
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Application No.: US14302371Application Date: 2014-06-11
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Publication No.: US09548363B2Publication Date: 2017-01-17
- Inventor: Suman Datta , Mantu K. Hudait , Mark L. Doczy , Jack T. Kavalieros , Majumdar Amian , Justin K. Brask , Been-Yih Jin , Matthew V. Metz , Robert S. Chau
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/778 ; H01L29/66 ; H01L21/8238 ; H01L21/8252 ; H01L27/06 ; H01L27/092 ; H01L29/10 ; H01L29/51
Abstract:
A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.
Public/Granted literature
- US20140291615A1 EXTREME HIGH MOBILITY CMOS LOGIC Public/Granted day:2014-10-02
Information query
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