Invention Grant
US09558993B2 Pattern structures in semiconductor devices and methods of forming pattern structures in semiconductor devices
有权
半导体器件中的图案结构和在半导体器件中形成图案结构的方法
- Patent Title: Pattern structures in semiconductor devices and methods of forming pattern structures in semiconductor devices
- Patent Title (中): 半导体器件中的图案结构和在半导体器件中形成图案结构的方法
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Application No.: US14072882Application Date: 2013-11-06
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Publication No.: US09558993B2Publication Date: 2017-01-31
- Inventor: Jaehwang Sim , Jaeho Min , Jaehan Lee , Keonsoo Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2009-0086808 20090915
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/311 ; H01L21/768 ; H01L21/3213 ; H01L21/308 ; H01L23/528 ; H01L27/115
Abstract:
A pattern structure in a semiconductor device includes an extending line and a pad connected with an end portion of the extending line. The pad may have a width that is larger than a width of the extending line. The pad includes a protruding portion extending from a lateral portion of the pad. The pattern structure may be formed by simplified processes and may be employed in various semiconductor devices requiring minute patterns and pads.
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