公开(公告)号：US20140322911A1

公开(公告)日：2014-10-30

申请号：US14328496

申请日：2014-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNG-HO LEE ,  Keonsoo Kim ,  Hyunchul Back ,  Jinhyun Shin ,  Seungwook Choi

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  H01L21/76816 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76885 ,  H01L21/76897

Abstract: A method of forming a semiconductor device may include forming a contact mold layer on a substrate; forming an interconnection mold layer on the contact mold layer that includes a material having an etching selectivity with respect to the contact mold layer; forming grooves in the interconnection mold layer that extend in a first direction and expose the contact mold layer; forming holes in the contact mold layer connected to the grooves by etching a part of the contact mold layer exposed by the groove; and forming contact portions in the holes and interconnections in the groove. A diffusion coefficient of mobile atoms in the contact mold layer is greater than a diffusion coefficient of mobile atoms in a nitride.

Abstract translation: 形成半导体器件的方法可以包括在基片上形成接触模层; 在所述接触模层上形成互连模层，所述互连模层包括相对于所述接触模层具有蚀刻选择性的材料; 在所述互连模制层中形成沿第一方向延伸并暴露所述接触模制层的凹槽; 通过蚀刻由凹槽露出的接触模具层的一部分，在连接到凹槽的接触模层中形成孔; 并且在孔中形成接触部分和凹槽中的互连。 接触模具层中的移动原子的扩散系数大于氮化物中的移动原子的扩散系数。

公开(公告)号：US09558993B2

公开(公告)日：2017-01-31

申请号：US14072882

申请日：2013-11-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehwang Sim ,  Jaeho Min ,  Jaehan Lee ,  Keonsoo Kim

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/308 ,  H01L23/528 ,  H01L27/115

CPC classification number: H01L21/76802 ,  H01L21/0334 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/311 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816 ,  H01L23/528 ,  H01L27/11521 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A pattern structure in a semiconductor device includes an extending line and a pad connected with an end portion of the extending line. The pad may have a width that is larger than a width of the extending line. The pad includes a protruding portion extending from a lateral portion of the pad. The pattern structure may be formed by simplified processes and may be employed in various semiconductor devices requiring minute patterns and pads.

Abstract translation: 半导体器件中的图案结构包括延伸线和与延伸线的端部连接的焊盘。 垫可以具有大于延伸线的宽度的宽度。 垫包括从垫的侧部延伸的突出部分。 图案结构可以通过简化的工艺形成，并且可以用于需要微小图案和焊盘的各种半导体器件中。

公开(公告)号：US08741767B2

公开(公告)日：2014-06-03

申请号：US14091680

申请日：2013-11-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoonmoon Park ,  Jae-Hwang Sim ,  Se-Young Park ,  Keonsoo Kim ,  Jaehan Lee ,  Seungwon Seong

IPC: H01L23/48 ,  H01L27/32

CPC classification number: H01L27/3223 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/76877 ,  H01L27/11519 ,  H01L27/11529 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor substrate including a cell region and a core region adjacent to the cell region, active regions in the cell region and the core region, an interlayer insulating layer covering the active regions, upper cell contacts penetrating the interlayer insulating layer in the cell region, the upper cell contacts being adjacent to each other along a first direction and being electrically connected to the active regions, and core contacts penetrating the interlayer insulating layer in the active regions of the core region, the core contacts being adjacent to each other along the first direction and including upper connection core contacts electrically connected to the active regions, and dummy contacts adjacent to the upper connection core contacts, the dummy contacts being insulated from the active regions.

Abstract translation: 半导体器件包括：半导体衬底，包括单元区域和与单元区域相邻的芯区域，单元区域和芯区域中的有源区域，覆盖有源区域的层间绝缘层，穿过层间绝缘层的上部单元触点 电池区域，上电池触点沿着第一方向彼此相邻并且电连接到有源区域，并且芯触点穿透芯区域的有源区域中的层间绝缘层，芯触点与每个区域相邻 另一个沿着第一方向并且包括电连接到有源区的上连接芯触点，以及与上连接芯触点相邻的虚拟触头，虚拟触头与有源区绝缘。