Invention Grant
US09559060B2 Method of forming stacked trench contacts and structures formed thereby
有权
形成由此形成的堆叠沟槽触点和结构的方法
- Patent Title: Method of forming stacked trench contacts and structures formed thereby
- Patent Title (中): 形成由此形成的堆叠沟槽触点和结构的方法
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Application No.: US15220270Application Date: 2016-07-26
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Publication No.: US09559060B2Publication Date: 2017-01-31
- Inventor: Bernhard Sell , Oleg Golonzka
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L23/535 ; H01L23/528 ; H01L23/532 ; H01L27/088 ; H01L29/08 ; H01L21/28 ; H01L21/8234
Abstract:
Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a structure comprising a first contact metal disposed on a source/drain contact of a substrate, and a second contact metal disposed on a top surface of the first contact metal, wherein the second contact metal is disposed within an ILD disposed on a top surface of a metal gate disposed on the substrate.
Public/Granted literature
- US20160336271A1 METHOD OF FORMING STACKED TRENCH CONTACTS AND STRUCTURES FORMED THEREBY Public/Granted day:2016-11-17
Information query
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