Invention Grant
- Patent Title: Method of manufacturing fin diode structure
- Patent Title (中): 制造二极管结构的方法
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Application No.: US14745458Application Date: 2015-06-21
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Publication No.: US09559091B2Publication Date: 2017-01-31
- Inventor: Chang-Tzu Wang , Ping-Chen Chang , Tien-Hao Tang , Kuan-Cheng Su
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L27/02 ; H01L29/861 ; H01L21/76 ; H01L29/78 ; H01L27/06 ; H01L29/06 ; H01L21/22 ; H01L21/265 ; H01L21/306 ; H01L29/66 ; H01L29/16 ; H01L29/20

Abstract:
A method of manufacturing a fin diode structure includes providing a substrate, forming a doped well in said substrate, forming at least one doped region of first conductivity type or at least one doped region of second doped type in said doped well, performing an etching process to said doped region of first conductivity type or said doped region of second conductivity type to form a plurality of fins on said doped region of first conductivity type or on said doped region of second conductivity type, forming shallow trench isolations between said fins, and performing a doping process to said fins to form fins of first conductivity type and fins of second conductivity type.
Public/Granted literature
- US20150303183A1 METHOD OF MANUFACTURING FIN DIODE STRUCTURE Public/Granted day:2015-10-22
Information query
IPC分类: