Invention Grant
US09559134B2 Deep trench spacing isolation for complementary metal-oxide-semiconductor (CMOS) image sensors
有权
互补金属氧化物半导体（CMOS）图像传感器的深沟槽间隔隔离
- Patent Title: Deep trench spacing isolation for complementary metal-oxide-semiconductor (CMOS) image sensors
- Patent Title (中): 互补金属氧化物半导体（CMOS）图像传感器的深沟槽间隔隔离
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Application No.: US14564196Application Date: 2014-12-09
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Publication No.: US09559134B2Publication Date: 2017-01-31
- Inventor: Tai-I Yang , Jung-I Lin , Ta-Chun Lin , Tien-Lu Lin , Chen-Jong Wang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L27/148
- IPC: H01L27/148 ; H01L29/768 ; H01L29/00 ; H01L27/146 ; H01L27/092 ; H01L29/94 ; H01L27/12
Abstract:
An image sensor employing deep trench spacing isolation is provided. A plurality of pixel sensors is arranged over or within a semiconductor substrate. A trench is arranged in the semiconductor substrate around and between adjacent ones of the plurality of pixel sensors, and the trench has a gap located between sidewalls of the trench. A cap is arranged over or within the trench at a position overlying the gap. The cap seals the gap within the trench. A method of manufacturing the image sensor is also provided.
Public/Granted literature
- US20160163749A1 DEEP TRENCH SPACING ISOLATION FOR COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) IMAGE SENSORS Public/Granted day:2016-06-09
Information query
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