Invention Grant
- Patent Title: Semiconductor device, power control device and electronic system
- Patent Title (中): 半导体装置,电力控制装置及电子系统
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Application No.: US14832867Application Date: 2015-08-21
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Publication No.: US09559687B2Publication Date: 2017-01-31
- Inventor: Ryo Kanda , Tetsu Toda , Junichi Nakamura , Kazuyuki Umezu , Tomonobu Kurihara , Takahiro Nagatsu , Yasushi Nakahara , Yoshinori Kaya
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2014-170091 20140825
- Main IPC: H02P27/04
- IPC: H02P27/04 ; H03K17/687 ; H03K19/0185 ; H03K5/24 ; H03K17/567 ; H02P27/06

Abstract:
In order to reduce the cost and the like of a power control device including a semiconductor device such as a driver IC, as well as an electronic system, the driver IC includes a high side driver, a level shift circuit, first and second transistors, and a comparator circuit. The first transistor is formed in a termination area. The second transistor is formed in the termination region and is driven by a first power supply voltage. The comparator circuit is formed in a first region to drive the first transistor to be ON when the voltage of a sense node is lower than the first power supply voltage, while driving the first transistor to be OFF when the voltage of the sense node is higher than the first power supply voltage. The second transistor is a depression type transistor.
Public/Granted literature
- US20160056818A1 SEMICONDUCTOR DEVICE, POWER CONTROL DEVICE AND ELECTRONIC SYSTEM Public/Granted day:2016-02-25
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