Abstract:
In order to reduce the cost and the like of a power control device including a semiconductor device such as a driver IC, as well as an electronic system, the driver IC includes a high side driver, a level shift circuit, first and second transistors, and a comparator circuit. The first transistor is formed in a termination area. The second transistor is formed in the termination region and is driven by a first power supply voltage. The comparator circuit is formed in a first region to drive the first transistor to be ON when the voltage of a sense node is lower than the first power supply voltage, while driving the first transistor to be OFF when the voltage of the sense node is higher than the first power supply voltage. The second transistor is a depression type transistor.
Abstract:
A photoelectric conversion device is provided that has high linearity of output current to illuminance and is applicable to illumination sensors. The photoelectric conversion device outputs appropriate current by complementing first current, which is generated in response to incident light, with complementary current. The complementary current is generated based on second current flowing in response to the light. The second current is generated by a device having the same element area as that of a device that generates the first current. When the second current flows, the complementary current is generated based on a direction of the second current and is then added to the first current.
Abstract:
A driver integrated circuit includes a bootstrap circuit (BSC) configured to output a boot power supply voltage (VB) based on a first power supply voltage, the boot power supply voltage being higher than the first power supply voltage; a level shift circuit (LSC) configured to output an output pulse signal based on an input pulse signal and the boot power supply voltage; a high side driving circuit (HSU) configured to output a high side driving voltage based on the boot power supply voltage and the output pulse signal, wherein the bootstrap circuit includes a sense metal oxide semiconductor (MOS) transistor and a boot MOS transistor, wherein the sense MOS transistor includes a depression-type transistor.