Methods of forming contacts for a semiconductor device structure, and related methods of forming a semiconductor device structure

Invention Grant

US09564442B2 Methods of forming contacts for a semiconductor device structure, and related methods of forming a semiconductor device structure 有权

Title translation: 形成用于半导体器件结构的触点的方法以及形成半导体器件结构的相关方法

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Patent Title: Methods of forming contacts for a semiconductor device structure, and related methods of forming a semiconductor device structure
Patent Title (中): 形成用于半导体器件结构的触点的方法以及形成半导体器件结构的相关方法
Application No.: US14681884

Application Date: 2015-04-08
Publication No.: US09564442B2

Publication Date: 2017-02-07
Inventor: Sanh D. Tang , Wolfgang Mueller , Sourabh Dhir , Dylan R. MacMaster
Applicant: Micron Technology, Inc.
Applicant Address: US ID Boise
Assignee: Micron Technology, Inc.
Current Assignee: Micron Technology, Inc.
Current Assignee Address: US ID Boise
Agency: TraskBritt
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L27/108 ; H01L21/768 ; H01L21/311 ; H01L21/762 ; H01L21/02 ; H01L29/06 ; H01L23/528

Methods of forming contacts for a semiconductor device structure, and related methods of forming a semiconductor device structure

Abstract:

A method of forming contacts for a semiconductor device structure comprises forming contact holes extending into neighboring semiconductive pillars and into a nitride material of nitride-capped electrodes. Composite structures are formed within the contact holes and comprise oxide structures over sidewalls of the contact holes and nitride structures over the oxide structures. Conductive structures are formed over inner sidewalls of the composite structures. Additional nitride-capped electrodes are formed over the conductive structures and extend perpendicular to the nitride-capped electrodes. Pairs of nitride spacers are formed over opposing sidewalls of the additional nitride-capped electrodes and are separated from neighboring pairs of nitride spacers by apertures extending to upper surfaces of a portion of the neighboring semiconductive pillars. Portions of the oxide structures are removed to expose sidewalls of the portion of the neighboring semiconductive pillars. Semiconductor device structures and additional methods are also described.

Abstract(Chinese):

形成用于半导体器件结构的触点的方法包括形成延伸到相邻的半导体柱中的接触孔，并形成氮化物覆盖的电极的氮化物材料。复合结构形成在接触孔内并且包括在接触孔的侧壁上的氧化物结构和氧化物结构上的氮化物结构。导电结构形成在复合结构的内侧壁上。附加的氮化物封盖的电极形成在导电结构之上并垂直于氮化物封盖的电极延伸。一对氮化物间隔物形成在另外的氮化物覆盖的电极的相对侧壁上，并且通过延伸到相邻半导体柱的一部分的上表面的孔与相邻的氮化物间隔物相分离。去除部分氧化物结构以暴露相邻半导体柱的部分的侧壁。还描述了半导体器件结构和附加方法。

Public/Granted literature

US20160300842A1 METHODS OF FORMING CONTACTS FOR A SEMICONDUCTOR DEVICE STRUCTURE, RELATED METHODS OF FORMING A SEMICONDUCTOR STRUCTURE, AND RELATED SEMICONDUCTOR STRUCTURES Public/Granted day:2016-10-13

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS