Invention Grant
- Patent Title: Liquid crystal displays with oxide-based thin-film transistors
- Patent Title (中): 具有氧化物基薄膜晶体管的液晶显示器
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Application No.: US14228070Application Date: 2014-03-27
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Publication No.: US09564478B2Publication Date: 2017-02-07
- Inventor: Shih Chang Chang , Ming-Chin Hung , Cheng-Ho Yu , Ting-Kuo Chang , Abbas Jamshidi Roudbari , Shang-Chih Lin , Kyung-Wook Kim , Chun-Yao Huang , Szu-Hsien Lee , Yu-Cheng Chen , Hiroshi Osawa
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Treyz Law Group, P.C.
- Agent G. Victor Treyz; Joseph F. Guihan
- Main IPC: G02F1/136
- IPC: G02F1/136 ; G02F1/1345 ; H01L27/32 ; H01L27/12 ; G09G3/36 ; G02F1/1368 ; G09G3/32 ; G02F1/1362

Abstract:
An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.
Public/Granted literature
- US20150055047A1 Liquid Crystal Displays with Oxide-Based Thin-Film Transistors Public/Granted day:2015-02-26
Information query
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