Invention Grant
US09567204B2 Microelectrochemical systems (MEMS) device having a seal layer arranged over or lining a hole in fluid communication with a cavity of the MEMS device
有权
具有密封层的微电化学系统（MEMS）装置，该密封层布置在与MEMS装置的空腔流体连通的孔中或衬里
- Patent Title: Microelectrochemical systems (MEMS) device having a seal layer arranged over or lining a hole in fluid communication with a cavity of the MEMS device
- Patent Title (中): 具有密封层的微电化学系统（MEMS）装置，该密封层布置在与MEMS装置的空腔流体连通的孔中或衬里
-
Application No.: US14472636Application Date: 2014-08-29
-
Publication No.: US09567204B2Publication Date: 2017-02-14
- Inventor: Chia-Ming Hung , Shao-Chi Yu , Hsiang-Fu Chen , Wen-Chuan Tai , Hsin-Ting Huang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81C1/00
Abstract:
A method for manufacturing a microelectromechanical systems (MEMS) device is provided. According to the method, a semiconductor structure is provided. The semiconductor structure includes an integrated circuit (IC) substrate, a dielectric layer arranged over the IC substrate, and a MEMS substrate arranged over the IC substrate and the dielectric layer to define a cavity between the MEMS substrate and the IC substrate. The MEMS substrate includes a MEMS hole in fluid communication with the cavity and extending through the MEMS substrate. A sealing layer is formed over or lining the MEMS hole to hermetically seal the cavity with a reference pressure while the semiconductor structure is arranged within a vacuum having the reference pressure. The semiconductor structure resulting from application of the method is also provided.
Public/Granted literature
- US20160060103A1 High Vacuum Sealing for Sensor Platform Process Public/Granted day:2016-03-03
Information query
