Invention Grant
- Patent Title: Method of operating a reverse conducting IGBT
- Patent Title (中): 操作反向导通IGBT的方法
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Application No.: US14963509Application Date: 2015-12-09
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Publication No.: US09571087B2Publication Date: 2017-02-14
- Inventor: Frank Pfirsch , Dorothea Werber , Anton Mauder , Carsten Schaeffer
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/732 ; H03K17/12 ; H01L29/40 ; H01L29/06 ; H01L29/08 ; H03K3/01 ; H03K17/66
Abstract:
According to an embodiment of a method, a semiconductor device is operated in a reverse biased unipolar mode before operating the semiconductor device in an off-state in a forward biased mode. The semiconductor device includes at least one floating parasitic region disposed outside a cell region of the device.
Public/Granted literature
- US20160226477A1 Method of Operating a Reverse Conducting IGBT Public/Granted day:2016-08-04
Information query
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