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1.发明授权Method of manufacturing a reduced free-charge carrier lifetime semiconductor structure 有权制造减少的自由电荷载流子寿命半导体结构的方法公开(公告)号：US09543405B2
公开(公告)日：2017-01-10
申请号：US14228330
申请日：2014-03-28
IPC分类号： H01L29/73 , H01L29/66 , H01L29/32 , H01L29/739 , H01L27/06 , H01L29/167
CPC分类号： H01L29/66348 , H01L27/0611 , H01L29/167 , H01L29/32 , H01L29/7397
摘要： A method of manufacturing a reduced free-charge carrier lifetime semiconductor structure includes forming a plurality of transistor gate structures in trenches arranged in a semiconductor substrate, forming a body region between adjacent ones of the transistor gate structures and forming an end-of-range irradiation region between adjacent ones of the transistor gate structures, the end-of-range irradiation region having a plurality of vacancies.
摘要翻译： 一种制造减小的自由电荷载流子寿命半导体结构的方法包括在布置在半导体衬底中的沟槽中形成多个晶体管栅极结构，在相邻的晶体管栅极结构之间形成体区，并形成距离范围 所述晶体管栅极结构中的相邻晶体管栅极结构之间的区域，所述端部范围照射区域具有多个空位。
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公开(公告)号：US09337185B2
公开(公告)日：2016-05-10
申请号：US14561357
申请日：2014-12-05
IPC分类号： H01L21/70 , H01L21/8248 , H01L27/06 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/423 , H01L29/47 , H01L29/739 , H01L29/66 , H01L27/07
CPC分类号： H01L27/0635 , H01L27/0727 , H01L29/0615 , H01L29/0804 , H01L29/1095 , H01L29/4236 , H01L29/47 , H01L29/66348 , H01L29/7397
摘要： A semiconductor device includes a first doping region extending from a main surface of a semiconductor substrate into the semiconductor substrate. Further, the semiconductor device includes a second doping region arranged adjacent to the first doping region. The first doping region includes at least one low doping dose portion extending from the main surface of the semiconductor substrate to the second doping region. A doping dose within the low doping dose portion of the first doping region is less than 3 times a breakdown charge. Additionally, the semiconductor device includes a first electrode structure in contact with the first doping region at the main surface of the semiconductor substrate. The work function of the first electrode structure at the main surface of the semiconductor substrate is larger than 4.9 eV or lower than 4.4 eV.
摘要翻译： 半导体器件包括从半导体衬底的主表面延伸到半导体衬底中的第一掺杂区域。 此外，半导体器件包括邻近第一掺杂区布置的第二掺杂区。 第一掺杂区域包括从半导体衬底的主表面延伸到第二掺杂区域的至少一个低掺杂剂量部分。 第一掺杂区域的低掺杂剂量部分内的掺杂剂量小于击穿电荷的3倍。 另外，半导体器件包括与半导体衬底的主表面处的第一掺杂区域接触的第一电极结构。 第一电极结构在半导体衬底的主表面上的功函数大于4.9eV或低于4.4eV。
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公开(公告)号：US09136397B2
公开(公告)日：2015-09-15
申请号：US13906738
申请日：2013-05-31
IPC分类号： H01L29/80 , H01L29/812 , H01L29/04 , H01L29/16 , H01L29/66 , H01L29/267 , H01L29/872
CPC分类号： H01L29/66909 , H01L29/04 , H01L29/1608 , H01L29/267 , H01L29/47 , H01L29/66068 , H01L29/66431 , H01L29/66734 , H01L29/66787 , H01L29/66848 , H01L29/7827 , H01L29/8122 , H01L29/872
摘要： A field-effect semiconductor device having a semiconductor body with a main surface is provided. The semiconductor body includes, in a vertical cross-section substantially orthogonal to the main surface, a drift layer of a first conductivity type, a semiconductor mesa of the first conductivity type adjoining the drift layer, substantially extending to the main surface and having two side walls, and two second semiconductor regions of a second conductivity type arranged next to the semiconductor mesa. Each of the two second semiconductor regions forms a pn-junction at least with the drift layer. A rectifying junction is formed at least at one of the two side walls of the mesa. Further, a method for producing a heterojunction semiconductor device is provided.
摘要翻译： 提供了具有主表面的半导体本体的场效应半导体器件。 半导体本体在基本上垂直于主表面的垂直横截面中包括第一导电类型的漂移层，邻接漂移层的第一导电类型的半导体台面，基本上延伸到主表面并具有两个侧面 壁，以及布置在半导体台面旁边的第二导电类型的两个第二半导体区域。 两个第二半导体区域中的每一个至少与漂移层形成pn结。 在台面的两个侧壁中的至少一个侧面上形成整流结。 此外，提供了一种异质结半导体器件的制造方法。
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公开(公告)号：US20240304709A1
公开(公告)日：2024-09-12
申请号：US18583993
申请日：2024-02-22
IPC分类号： H01L29/739 , H01L27/02 , H01L29/06 , H01L29/43 , H01L29/66
CPC分类号： H01L29/7397 , H01L27/0207 , H01L29/0603 , H01L29/435 , H01L29/66333
摘要： A semiconductor device includes a semiconductor body having a trench transistor cell array. The trench transistor cell array includes a first trench transistor cell unit and a second trench transistor cell unit. Transistor cells based on the first trench transistor cell unit and transistor cells based on the second trench transistor cell unit are electrically connected in parallel. The first trench transistor cell unit has a first threshold voltage. The second trench transistor cell unit has a second threshold voltage larger than the first threshold voltage. An absolute value of dU/dt at turning on a nominal current of the transistor cell array is at least 50% of an absolute value of dU/dt at turning on 10% of the nominal current of the transistor cell array, dU/dt being the temporal derivate of a voltage U between load terminals of the trench transistor cell array.
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5.发明公开公开(公告)号：US20230307531A1
公开(公告)日：2023-09-28
申请号：US18122918
申请日：2023-03-17
发明人： Roman Baburske , Frank Pfirsch , Jana Hänsel , Katja Waschneck
IPC分类号： H01L29/739 , H01L29/10 , H03K17/567
CPC分类号： H01L29/7397 , H01L29/1095 , H03K17/567
摘要： A power semiconductor device includes: a semiconductor body coupled to first and second load terminals; an active region with first and second sections, both configured to conduct a load current between the load terminals; electrically isolated from the load terminals, first control electrodes in the first section and second control electrodes in both the first and second sections); and semiconductor channel structures in the semiconductor body extending in both the first and second sections. Each channel structure is associated to at least one of the first and second control electrodes. The respective control electrode is configured to induce an inversion channel for load current conduction in the associated semiconductor channel structure. The first section exhibits a first effective total inversion channel width per unit area ratio, W/A1, and the second section exhibits a second effective inversion channel width per unit area ratio, W/A2, where W/A1>W/A2.
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公开(公告)号：US10608104B2
公开(公告)日：2020-03-31
申请号：US14228881
申请日：2014-03-28
发明人： Alexander Philippou , Johannes Georg Laven , Christian Jaeger , Frank Wolter , Frank Pfirsch , Antonio Vellei
IPC分类号： H01L29/78 , H01L29/40 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/417 , H01L29/423 , H01L29/739
摘要： A transistor device includes a semiconductor mesa region between first and second trenches in a semiconductor body, a body region of a first conductivity type and a source region of a second conductivity type in the semiconductor mesa region, a drift region of the second conductivity type in the semiconductor body, and a gate electrode adjacent the body region in the first trench, and dielectrically insulated from the body region by a gate dielectric. The body region separates the source region from the drift region and extends to the surface of the semiconductor mesa region adjacent the source region. The body region comprises a surface region which adjoins the surface of the semiconductor mesa region and the first trench. The surface region has a higher doping concentration than a section of the body region that separates the source region from the drift region.
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7.发明申请IGBT Having at Least One First Type Transistor Cell and Reduced Feedback Capacitance 有权具有至少一个第一类晶体管电池和减少反馈电容的IGBT公开(公告)号：US20160005818A1
公开(公告)日：2016-01-07
申请号：US14854396
申请日：2015-09-15
发明人： Christian Philipp Sandow , Hans-Joachim Schulze , Johannes Georg Laven , Franz-Josef Niedernostheide , Frank Pfirsch , Hans-Peter Felsl
IPC分类号： H01L29/10 , H01L29/739
CPC分类号： H01L29/1095 , H01L29/0619 , H01L29/0634 , H01L29/0834 , H01L29/0847 , H01L29/407 , H01L29/42368 , H01L29/7393 , H01L29/7395 , H01L29/7397
摘要： An IGBT includes at least one first type transistor cell, including a base region, first and second emitter regions, and a body region arranged between the first emitter region and base region. The base region is arranged between the body region and second emitter region. A gate electrode adjacent the body region is dielectrically insulated from the body region by a gate dielectric. A base electrode adjacent the base region is dielectrically insulated from the base region by a base electrode dielectric. The base region has a first base region section adjoining the base electrode dielectric and a second base region section arranged between the second emitter region and the first base region section. A ratio between the doping concentration of the first base region section and the doping concentration of the second base region section is at least 10. The base electrode dielectric is thicker than the gate dielectric.
摘要翻译： IGBT包括至少一个第一类型晶体管单元，包括基极区，第一和第二发射极区以及布置在第一发射极区和基极区之间的体区。 基部区域布置在体区和第二发射区之间。 邻近体区的栅电极通过栅极电介质与体区绝缘绝缘。 与基极相邻的基极通过基极电介质与基极区域介电绝缘。 基极区域具有邻接基极电介质的第一基极区域和布置在第二发射极区域与第一基极区域之间的第二基极区域区域。 第一基极区域的掺杂浓度与第二基极区域的掺杂浓度之比至少为10.基极电介质比栅极电介质厚。
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公开(公告)号：US20150333161A1
公开(公告)日：2015-11-19
申请号：US14278519
申请日：2014-05-15
IPC分类号： H01L29/739 , H01L29/10 , H01L29/06
CPC分类号： H01L29/7395 , H01L29/0619 , H01L29/0623 , H01L29/0847 , H01L29/1095 , H01L29/7397
摘要： A semiconductor component is described herein. In accordance with one example of the invention, the semiconductor component includes a semiconductor body, which has a top surface and a bottom surface. A body region, which is doped with dopants of a second doping type, is arranged at the top surface of the semiconductor body. A drift region is arranged under the body region and doped with dopants of a first doping type, which is complementary to the second doping type. Thus a first pn-junction is formed at the transition between the body region and the drift region. A field stop region is arranged under the drift region and adjoins the drift region. The field stop region is doped with dopants of the same doping type as the drift region. However, the concentration of dopants in the field stop region is higher than the concentration of dopants in the drift region. At least one pair of semiconductor layers composed of a first and a second semiconductor layer are arranged in the drift region. The first semiconductor layer extends substantially parallel to the top surface of the semiconductor body and is doped with dopants of the first doping type but with a higher concentration of dopants than the drift region. The second semiconductor layer is arranged adjacent to or adjoining the first semiconductor layer and is doped with dopants of the second doping type. Furthermore, the second semiconductor layer is structured to include openings so that a vertical current path is provided through the drift region without an intervening pn-junction.
摘要翻译： 本文描述了半导体部件。 根据本发明的一个示例，半导体部件包括具有顶表面和底表面的半导体本体。 掺杂有第二掺杂类型的掺杂剂的体区设置在半导体本体的顶表面。 漂移区布置在体区下方并掺杂有与第二掺杂类型互补的第一掺杂类型的掺杂剂。 因此，在身体区域和漂移区域之间的过渡处形成第一pn结。 漂移区域下方设置场停止区域，并与漂移区域相邻。 场停止区域掺杂有与漂移区相同的掺杂类型的掺杂剂。 然而，场停止区域中的掺杂剂的浓度高于漂移区域中的掺杂剂的浓度。 在漂移区域中布置由第一和第二半导体层组成的至少一对半导体层。 第一半导体层基本上平行于半导体本体的顶表面延伸，并掺杂有第一掺杂类型的掺杂剂，但具有比漂移区更高的掺杂剂浓度。 第二半导体层被布置为与第一半导体层相邻或相邻，并且掺杂有第二掺杂类型的掺杂剂。 此外，第二半导体层被构造成包括开口，使得通过漂移区域提供垂直电流路径，而没有中间pn结。
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公开(公告)号：US09166027B2
公开(公告)日：2015-10-20
申请号：US14041094
申请日：2013-09-30
发明人： Christian Philipp Sandow , Hans-Joachim Schulze , Johannes Georg Laven , Franz-Josef Niedernostheide , Frank Pfirsch , Hans-Peter Felsl
IPC分类号： H01L29/739
CPC分类号： H01L29/1095 , H01L29/0619 , H01L29/0634 , H01L29/0834 , H01L29/0847 , H01L29/407 , H01L29/42368 , H01L29/7393 , H01L29/7395 , H01L29/7397
摘要： An IGBT includes at least one first type transistor cell, including a base region, a first emitter region, a body region, and a second emitter region. The body region is arranged between the first emitter region and the base region. The base region is arranged between the body region and the second emitter region. The IGBT further includes a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a base electrode adjacent the base region and dielectrically insulated from the base region by a base electrode dielectric. The base region has a first base region section adjoining the base electrode dielectric and a second base region section arranged between the second emitter region and the first base region section. A doping concentration of the first base region section is higher than a doping concentration of the second base region section.
摘要翻译： IGBT包括至少一个第一类型晶体管单元，其包括基极区，第一发射区，体区和第二发射极区。 体区布置在第一发射区和基区之间。 基部区域布置在主体区域和第二发射区域之间。 IGBT还包括与主体区域相邻并且通过栅极电介质与体区电介绝缘的栅极电极和与基极区域相邻并且与基极区域由基极电介质电介质绝缘的基极。 基极区域具有邻接基极电介质的第一基极区域和布置在第二发射极区域与第一基极区域之间的第二基极区域区域。 第一基极区域的掺杂浓度高于第二基极区域的掺杂浓度。
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10.发明申请Semiconductor Device and RC-IGBT with Zones Directly Adjoining a Rear Side Electrode 有权半导体器件和RC-IGBT，带有直接相邻的背面电极公开(公告)号：US20150236143A1
公开(公告)日：2015-08-20
申请号：US14185117
申请日：2014-02-20
发明人： Frank Pfirsch , Dorothea Werber
IPC分类号： H01L29/739 , H01L21/266 , H01L29/66 , H01L29/40 , H01L29/06
CPC分类号： H01L29/7397 , H01L21/266 , H01L29/0619 , H01L29/0696 , H01L29/0834 , H01L29/407 , H01L29/66348
摘要： A semiconductor device includes a drift zone of a first conductivity type in a semiconductor body. Controllable cells are configured to form a conductive channel connected with the drift zone in a first state. First zones of the first conductivity type as well as second zones and a third zone of a complementary second conductivity type are between the drift zone and a rear side electrode, respectively. The first, second and third zones directly adjoin the rear side electrode. The third zone is larger and has a lower mean emitter efficiency than the second zones.
摘要翻译： 半导体器件包括半导体本体中的第一导电类型的漂移区。 可控电池被配置为在第一状态下形成与漂移区连接的导电通道。 第一导电类型的第一区以及第二区和互补第二导电类型的第三区分别位于漂移区和后侧电极之间。 第一，第二和第三区域直接毗邻后侧电极。 第三个区域比第二个区域更大，平均发射器效率更低。
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