Invention Grant
- Patent Title: Rotation plus vibration magnet for magnetron sputtering apparatus
- Patent Title (中): 旋转加振动磁体用于磁控溅射装置
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Application No.: US14791795Application Date: 2015-07-06
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Publication No.: US09574265B2Publication Date: 2017-02-21
- Inventor: Bo-Hung Lin , Ming-Chih Tsai , You-Hua Chou , Chung-En Kao
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: C23C14/35
- IPC: C23C14/35 ; H01J37/32 ; H01J37/34

Abstract:
In some embodiments, the present disclosure relates to a plasma processing system having a magnetron that provides a symmetric magnetic track through a combination of vibrational and rotational motion. The disclosed magnetron has a magnetic element that generates a magnetic field. The magnetic element is attached to an elastic element connected between the magnetic element and a rotational shaft that rotates the magnetic element about a center of the sputtering target. The elastic element may vary its length during rotation of the magnetic element to change the radial distance between the rotational shaft and the magnetic element. The resulting magnetic track enables concurrent motion of the magnetic element in both an angular direction and a radial direction. Such motion enables a symmetric magnetic track that provides good wafer uniformity and a short deposition time.
Public/Granted literature
- US20150307985A1 ROTATION PLUS VIBRATION MAGNET FOR MAGNETRON SPUTTERING APPARATUS Public/Granted day:2015-10-29
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