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    ROTATION PLUS VIBRATION MAGNET FOR MAGNETRON SPUTTERING APPARATUS
    1.
    发明申请
    ROTATION PLUS VIBRATION MAGNET FOR MAGNETRON SPUTTERING APPARATUS 有权
    旋转式振动磁铁用于磁控溅射装置

    公开(公告)号：US20150307985A1

    公开(公告)日：2015-10-29

    申请号：US14791795

    申请日：2015-07-06

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Bo-Hung Lin ,  Ming-Chih Tsai ,  You-Hua Chou ,  Chung-En Kao

    IPC: C23C14/35

    CPC classification number: C23C14/351 ,  C23C14/35 ,  H01J37/32669 ,  H01J37/3408 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3461

    Abstract: In some embodiments, the present disclosure relates to a plasma processing system having a magnetron that provides a symmetric magnetic track through a combination of vibrational and rotational motion. The disclosed magnetron has a magnetic element that generates a magnetic field. The magnetic element is attached to an elastic element connected between the magnetic element and a rotational shaft that rotates the magnetic element about a center of the sputtering target. The elastic element may vary its length during rotation of the magnetic element to change the radial distance between the rotational shaft and the magnetic element. The resulting magnetic track enables concurrent motion of the magnetic element in both an angular direction and a radial direction. Such motion enables a symmetric magnetic track that provides good wafer uniformity and a short deposition time.

    Abstract translation: 在一些实施例中，本公开涉及具有磁控管的等离子体处理系统，该磁控管通过振动和旋转运动的组合来提供对称磁道。 所公开的磁控管具有产生磁场的磁性元件。 磁性元件附接到连接在磁性元件和使磁性元件围绕溅射靶的中心旋转的旋转轴之间的弹性元件。 弹性元件可以在磁性元件的旋转期间改变其长度，以改变旋转轴和磁性元件之间的径向距离。 由此产生的磁道能够使磁性元件在角度方向和径向方向上同时运动。 这样的运动能够提供良好的晶片均匀性和较短的沉积时间的对称磁迹。

    Rotation plus vibration magnet for magnetron sputtering apparatus
    3.
    发明授权
    Rotation plus vibration magnet for magnetron sputtering apparatus 有权
    旋转加振动磁体用于磁控溅射装置

    公开(公告)号：US09574265B2

    公开(公告)日：2017-02-21

    申请号：US14791795

    申请日：2015-07-06

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Bo-Hung Lin ,  Ming-Chih Tsai ,  You-Hua Chou ,  Chung-En Kao

    IPC: C23C14/35 ,  H01J37/32 ,  H01J37/34

    CPC classification number: C23C14/351 ,  C23C14/35 ,  H01J37/32669 ,  H01J37/3408 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3461

    Abstract: In some embodiments, the present disclosure relates to a plasma processing system having a magnetron that provides a symmetric magnetic track through a combination of vibrational and rotational motion. The disclosed magnetron has a magnetic element that generates a magnetic field. The magnetic element is attached to an elastic element connected between the magnetic element and a rotational shaft that rotates the magnetic element about a center of the sputtering target. The elastic element may vary its length during rotation of the magnetic element to change the radial distance between the rotational shaft and the magnetic element. The resulting magnetic track enables concurrent motion of the magnetic element in both an angular direction and a radial direction. Such motion enables a symmetric magnetic track that provides good wafer uniformity and a short deposition time.

    Abstract translation: 在一些实施例中，本公开涉及具有磁控管的等离子体处理系统，该磁控管通过振动和旋转运动的组合来提供对称磁道。 所公开的磁控管具有产生磁场的磁性元件。 磁性元件附接到连接在磁性元件和使磁性元件围绕溅射靶的中心旋转的旋转轴之间的弹性元件。 弹性元件可以在磁性元件的旋转期间改变其长度，以改变旋转轴和磁性元件之间的径向距离。 由此产生的磁道能够使磁性元件在角度方向和径向方向上同时运动。 这样的运动能够提供良好的晶片均匀性和较短的沉积时间的对称磁迹。

    Ultra High Vacuum Cryogenic Pumping Apparatus with Nanostructure Material
    4.
    发明申请
    Ultra High Vacuum Cryogenic Pumping Apparatus with Nanostructure Material 审中-公开
    具有纳米结构材料的超高真空低温泵送装置

    公开(公告)号：US20150107273A1

    公开(公告)日：2015-04-23

    申请号：US14059851

    申请日：2013-10-22

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Surendra Babu Anantharaman ,  Wen-Cheng Yang ,  Chung-En Kao ,  Victor Y. Lu ,  Wei Chin

    IPC: F04B37/08

    CPC classification number: F04B37/08 ,  F04B37/085

    Abstract: Cryogenic pump apparatuses include nanostructure material to achieve an ultra-high vacuum level. The nanostructure material can be mixed with either an adsorbent material or a fixed glue layer which is utilized to fix the adsorbent material. The nanostructure material's good thermal conductivity and adsorption properties help to lower working temperature and extend regeneration cycle of the cryogenic pumps.

    Abstract translation: 低温泵装置包括达到超高真空度的纳米结构材料。 纳米结构材料可以与用于固定吸附剂材料的吸附材料或固定胶层混合。 纳米结构材料的良好导热性和吸附性能有助于降低工作温度并延长低温泵的再生循环。

    SHIELDING DESIGN FOR METAL GAP FILL
    8.
    发明申请
    SHIELDING DESIGN FOR METAL GAP FILL 有权
    金属填隙的屏蔽设计

    公开(公告)号：US20150118843A1

    公开(公告)日：2015-04-30

    申请号：US14589091

    申请日：2015-01-05

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Ming-Chin Tsai ,  Bo-Hung Lin ,  You-Hua Chou ,  Chung-En Kao

    IPC: H01L21/324 ,  H01L21/768 ,  C23C14/54 ,  C23C14/58 ,  C23C14/50

    CPC classification number: H01L21/324 ,  C23C14/50 ,  C23C14/541 ,  C23C14/5806 ,  H01L21/67115 ,  H01L21/76838

    Abstract: The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the disclosed physical vapor deposition system comprises at least one heat source having one or more lamp modules for heating of the substrate. The lamp modules may be separated from the substrate by a shielding device. In some embodiments, the shielding device comprises a one-piece device or a two piece device. The disclosed physical vapor deposition system can heat the semiconductor substrate, reflowing a metal film deposited thereon without the necessity for separate chambers, thereby decreasing process time, requiring less thermal budget, and decreasing substrate damage.

    Abstract translation: 本公开涉及被配置为加热半导体衬底或晶片的物理气相沉积系统。 在一些实施例中，所公开的物理气相沉积系统包括至少一个热源，其具有用于加热基底的一个或多个灯模块。 灯模块可以通过屏蔽装置与衬底分离。 在一些实施例中，屏蔽装置包括一件式装置或两件式装置。 所公开的物理气相沉积系统可以加热半导体衬底，回流沉积在其上的金属膜，而不需要单独的室，由此减少处理时间，需要较少的热量预算和减少衬底损伤。

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