Invention Grant
US09576840B2 Method of manufacturing semiconductor device using surface treatment and semiconductor device manufactured by the method
有权
使用表面处理制造半导体器件的方法和通过该方法制造的半导体器件
- Patent Title: Method of manufacturing semiconductor device using surface treatment and semiconductor device manufactured by the method
- Patent Title (中): 使用表面处理制造半导体器件的方法和通过该方法制造的半导体器件
-
Application No.: US14543820Application Date: 2014-11-17
-
Publication No.: US09576840B2Publication Date: 2017-02-21
- Inventor: Jaeyoung Park , Sungho Kang , Kichul Kim , Sunyoung Lee , Han Ki Lee , Bonyoung Koo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2013-0144680 20131126
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L21/762 ; H01L29/66 ; H01L21/336 ; H01L21/8234
Abstract:
A method of manufacturing a semiconductor device includes forming a first plurality of recessed regions in a substrate, the substrate having a protruded active region between the first plurality of recessed regions and the protruded active region having an upper surface and a sidewall, forming a device isolation film in the first plurality of recessed regions, the device isolation film exposing the upper surface and an upper portion of the sidewall of the protruded active region, and performing a first plasma treatment on the exposed surface of the protruded active region, wherein the plasma treatment is performed using a plasma gas containing at least one of an inert gas and a hydrogen gas in a temperature of less than or equal to about 700.
Public/Granted literature
Information query
IPC分类:
