公开(公告)号：US10043799B2

公开(公告)日：2018-08-07

申请号：US15407598

申请日：2017-01-17

申请人： Samsung Electronics Co., Ltd.

发明人： Jaeyoung Park ,  Sungho Kang ,  Kichul Kim ,  Sunyoung Lee ,  Han Ki Lee ,  Bonyoung Koo

IPC分类号： H01L21/336 ,  H01L21/302 ,  H01L21/461 ,  H01L27/088 ,  H01L29/34 ,  H01L29/06 ,  H01L29/08 ,  H01L21/306 ,  H01L21/8234 ,  H01L21/762 ,  H01L21/02 ,  H01L29/66 ,  H01L29/45 ,  H01L21/768 ,  H01L21/3205

CPC分类号： H01L27/0886 ,  H01L21/0206 ,  H01L21/302 ,  H01L21/306 ,  H01L21/32053 ,  H01L21/76224 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/34 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795

摘要： A method of manufacturing a semiconductor device includes forming a first plurality of recessed regions in a substrate, the substrate having a protruded active region between the first plurality of recessed regions and the protruded active region having an upper surface and a sidewall, forming a device isolation film in the first plurality of recessed regions, the device isolation film exposing the upper surface and an upper portion of the sidewall of the protruded active region, and performing a first plasma treatment on the exposed surface of the protruded active region, wherein the plasma treatment is performed using a plasma gas containing at least one of an inert gas and a hydrogen gas in a temperature of less than or equal to about 700° C.

公开(公告)号：US09576840B2

公开(公告)日：2017-02-21

申请号：US14543820

申请日：2014-11-17

申请人： Samsung Electronics Co., Ltd.

发明人： Jaeyoung Park ,  Sungho Kang ,  Kichul Kim ,  Sunyoung Lee ,  Han Ki Lee ,  Bonyoung Koo

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/762 ,  H01L29/66 ,  H01L21/336 ,  H01L21/8234

CPC分类号： H01L27/0886 ,  H01L21/0206 ,  H01L21/302 ,  H01L21/306 ,  H01L21/32053 ,  H01L21/76224 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/34 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795

摘要： A method of manufacturing a semiconductor device includes forming a first plurality of recessed regions in a substrate, the substrate having a protruded active region between the first plurality of recessed regions and the protruded active region having an upper surface and a sidewall, forming a device isolation film in the first plurality of recessed regions, the device isolation film exposing the upper surface and an upper portion of the sidewall of the protruded active region, and performing a first plasma treatment on the exposed surface of the protruded active region, wherein the plasma treatment is performed using a plasma gas containing at least one of an inert gas and a hydrogen gas in a temperature of less than or equal to about 700.

摘要翻译： 一种制造半导体器件的方法包括在衬底中形成第一多个凹陷区域，所述衬底在所述第一多个凹陷区域之间具有突出的有源区域和所述突出的有源区域具有上表面和侧壁，形成器件隔离 在所述第一多个凹陷区域中的膜，所述器件隔离膜暴露所述突出的有源区的所述上表面和所述侧壁的上部，并且对所述突出的有源区的所述暴露表面进行第一等离子体处理，其中所述等离子体处理 使用包含惰性气体和氢气中的至少一种的等离子体气体在小于或等于约700℃的温度下进行。