公开(公告)号：US10043799B2

公开(公告)日：2018-08-07

申请号：US15407598

申请日：2017-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeyoung Park ,  Sungho Kang ,  Kichul Kim ,  Sunyoung Lee ,  Han Ki Lee ,  Bonyoung Koo

IPC: H01L21/336 ,  H01L21/302 ,  H01L21/461 ,  H01L27/088 ,  H01L29/34 ,  H01L29/06 ,  H01L29/08 ,  H01L21/306 ,  H01L21/8234 ,  H01L21/762 ,  H01L21/02 ,  H01L29/66 ,  H01L29/45 ,  H01L21/768 ,  H01L21/3205

CPC classification number: H01L27/0886 ,  H01L21/0206 ,  H01L21/302 ,  H01L21/306 ,  H01L21/32053 ,  H01L21/76224 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/34 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795

Abstract: A method of manufacturing a semiconductor device includes forming a first plurality of recessed regions in a substrate, the substrate having a protruded active region between the first plurality of recessed regions and the protruded active region having an upper surface and a sidewall, forming a device isolation film in the first plurality of recessed regions, the device isolation film exposing the upper surface and an upper portion of the sidewall of the protruded active region, and performing a first plasma treatment on the exposed surface of the protruded active region, wherein the plasma treatment is performed using a plasma gas containing at least one of an inert gas and a hydrogen gas in a temperature of less than or equal to about 700° C.

公开(公告)号：US10006872B2

公开(公告)日：2018-06-26

申请号：US14955331

申请日：2015-12-01

Applicant: Samsung Electronics Co., Ltd. ,  Samsung Display Co., Ltd.

Inventor： Wonguk Seo ,  Kyoungchon Kim ,  Kuihyun Yoon ,  Kyunlae Kim ,  Jaeyoung Park ,  Kyoungho Yang ,  Young Heo

IPC: G01N21/958 ,  G01N21/88 ,  G01N21/94 ,  G01N21/95

CPC classification number: G01N21/94 ,  G01N21/8806 ,  G01N21/958 ,  G01N2021/9513

Abstract: Provided is an optical inspection system including a supporting unit, allowing a target object to be loaded thereon, a light source unit configured to emit a laser beam toward the target object, a light condensing unit collecting scattered light that is scattered at the target object when the laser beam is irradiated onto the target object, and a control unit controlling the light source unit and the light condensing unit and analyzing the scattered light to examine whether there are pollutants on the target object. The supporting unit may include a first supporting unit, on which the target object is disposed, and which is formed of a first material, and a second supporting unit, which is disposed under the first supporting unit and is formed of a second material different from the first material.

公开(公告)号：US10804269B2

公开(公告)日：2020-10-13

申请号：US16419318

申请日：2019-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungin Choi ,  Taehyeon Kim ,  Hongshik Shin ,  Taegon Kim ,  Jaeyoung Park ,  Yuichiro Sasaki

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/78 ,  H01L29/417 ,  H01L21/225 ,  H01L21/768 ,  H01L21/8238 ,  H01L29/161 ,  H01L29/165 ,  H01L21/285

Abstract: A method of fabricating a semiconductor device includes pattering an upper portion of a substrate to form a first active pattern, the substrate including a semiconductor element having a first lattice constant, performing a selective epitaxial growth process on an upper portion of the first active pattern to form a first source/drain region, doping the first source/drain region with gallium, performing an annealing process on the first source/drain region doped with gallium, and forming a first contact pattern coupled to the first source/drain region. The first source/drain region includes a semiconductor element having a second lattice constant larger than the first lattice constant.

公开(公告)号：US10355000B2

公开(公告)日：2019-07-16

申请号：US15793442

申请日：2017-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungin Choi ,  Taehyeon Kim ,  Hongshik Shin ,  Taegon Kim ,  Jaeyoung Park ,  Yuichiro Sasaki

IPC: H01L27/092 ,  H01L21/82 ,  H01L21/768 ,  H01L21/225 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L29/161 ,  H01L29/165

Abstract: A method of fabricating a semiconductor device includes pattering an upper portion of a substrate to form a first active pattern, the substrate including a semiconductor element having a first lattice constant, performing a selective epitaxial growth process on an upper portion of the first active pattern to form a first source/drain region, doping the first source/drain region with gallium, performing an annealing process on the first source/drain region doped with gallium, and forming a first contact pattern coupled to the first source/drain region. The first source/drain region includes a semiconductor element having a second lattice constant larger than the first lattice constant.

公开(公告)号：US11322494B2

公开(公告)日：2022-05-03

申请号：US17015307

申请日：2020-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungin Choi ,  Taehyeon Kim ,  Hongshik Shin ,  Taegon Kim ,  Jaeyoung Park ,  Yuichiro Sasaki

IPC: H01L27/092 ,  H01L21/768 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L29/417 ,  H01L21/225 ,  H01L29/161 ,  H01L29/165 ,  H01L21/285

Abstract: A method of fabricating a semiconductor device includes pattering an upper portion of a substrate to form a first active pattern, the substrate including a semiconductor element having a first lattice constant, performing a selective epitaxial growth process on an upper portion of the first active pattern to form a first source/drain region, doping the first source/drain region with gallium, performing an annealing process on the first source/drain region doped with gallium, and forming a first contact pattern coupled to the first source/drain region. The first source/drain region includes a semiconductor element having a second lattice constant larger than the first lattice constant.

公开(公告)号：US09698244B2

公开(公告)日：2017-07-04

申请号：US15062742

申请日：2016-03-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinbum Kim ,  Jaeyoung Park ,  Donghun Lee ,  Jeongho Yoo ,  Jieon Yoon ,  Kwan Heum Lee ,  Choeun Lee ,  Bonyoung Koo

IPC: H01L29/66 ,  H01L29/04 ,  H01L29/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/40 ,  H01L21/30

CPC classification number: H01L29/66636 ,  H01L21/3003 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/12 ,  H01L29/165 ,  H01L29/401 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/66545 ,  H01L29/78

Abstract: A method of fabricating a semiconductor device is provided as follows. A source/drain pattern is formed on a substrate. The source/drain pattern contains silicon atoms and germanium atoms. At least one germanium atom is removed from the germanium atoms of the source/drain pattern.

公开(公告)号：US09576840B2

公开(公告)日：2017-02-21

申请号：US14543820

申请日：2014-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeyoung Park ,  Sungho Kang ,  Kichul Kim ,  Sunyoung Lee ,  Han Ki Lee ,  Bonyoung Koo

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/762 ,  H01L29/66 ,  H01L21/336 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/0206 ,  H01L21/302 ,  H01L21/306 ,  H01L21/32053 ,  H01L21/76224 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/34 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795

Abstract: A method of manufacturing a semiconductor device includes forming a first plurality of recessed regions in a substrate, the substrate having a protruded active region between the first plurality of recessed regions and the protruded active region having an upper surface and a sidewall, forming a device isolation film in the first plurality of recessed regions, the device isolation film exposing the upper surface and an upper portion of the sidewall of the protruded active region, and performing a first plasma treatment on the exposed surface of the protruded active region, wherein the plasma treatment is performed using a plasma gas containing at least one of an inert gas and a hydrogen gas in a temperature of less than or equal to about 700.

Abstract translation: 一种制造半导体器件的方法包括在衬底中形成第一多个凹陷区域，所述衬底在所述第一多个凹陷区域之间具有突出的有源区域和所述突出的有源区域具有上表面和侧壁，形成器件隔离 在所述第一多个凹陷区域中的膜，所述器件隔离膜暴露所述突出的有源区的所述上表面和所述侧壁的上部，并且对所述突出的有源区的所述暴露表面进行第一等离子体处理，其中所述等离子体处理 使用包含惰性气体和氢气中的至少一种的等离子体气体在小于或等于约700℃的温度下进行。