Invention Grant
US09577061B2 Asymmetric high-K dielectric for reducing gate induced drain leakage
有权
用于减小栅极引起的漏极泄漏的非对称高K电介质
- Patent Title: Asymmetric high-K dielectric for reducing gate induced drain leakage
- Patent Title (中): 用于减小栅极引起的漏极泄漏的非对称高K电介质
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Application No.: US15159269Application Date: 2016-05-19
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Publication No.: US09577061B2Publication Date: 2017-02-21
- Inventor: Anthony I. Chou , Arvind Kumar , Chung-Hsun Lin , Shreesh Narasimha , Claude Ortolland , Jonathan T. Shaw
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NJ Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NJ Armonk
- Agency: Roberts Mlotkowski Safran Cole & Calderon, P.C.
- Agent Steven Meyers; Andrew M. Calderon
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/51 ; H01L29/78 ; H01L29/417 ; H01L21/28 ; H01L21/02 ; H01L21/8234
Abstract:
An asymmetric high-k dielectric for reduced gate induced drain leakage in high-k MOSFETs and methods of manufacture are disclosed. The method includes performing an implant process on a high-k dielectric sidewall of a gate structure. The method further includes performing an oxygen annealing process to grow an oxide region on a drain side of the gate structure, while inhibiting oxide growth on a source side of the gate structure adjacent to a source region.
Public/Granted literature
- US20160268390A1 ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE Public/Granted day:2016-09-15
Information query
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