Invention Grant
US09583396B2 Making a defect free fin based device in lateral epitaxy overgrowth region
有权
在横向外延生长区域中制造无缺陷鳍片的器件
- Patent Title: Making a defect free fin based device in lateral epitaxy overgrowth region
- Patent Title (中): 在横向外延生长区域中制造无缺陷鳍片的器件
-
Application No.: US14777730Application Date: 2013-06-28
-
Publication No.: US09583396B2Publication Date: 2017-02-28
- Inventor: Niti Goel , Benjamin Chu-Kung , Sansaptak Dasgupta , Niloy Mukherjee , Matthew V. Metz , Van H. Le , Jack T. Kavalieros , Robert S. Chau , Ravi Pillarisetty
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- International Application: PCT/US2013/048776 WO 20130628
- International Announcement: WO2014/209398 WO 20141231
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/02 ; H01L21/762 ; H01L29/66
Abstract:
Electronic device fins may be formed by epitaxially growing a first layer of material on a substrate surface at a bottom of a trench formed between sidewalls of shallow trench isolation (STI) regions. The trench height may be at least 1.5 times its width, and the first layer may fill less than the trench height. Then a second layer of material may be epitaxially grown on the first layer in the trench and over top surfaces of the STI regions. The second layer may have a second width extending over the trench and over portions of top surfaces of the STI regions. The second layer may then be patterned and etched to form a pair of electronic device fins over portions of the top surfaces of the STI regions, proximate to the trench. This process may avoid crystalline defects in the fins due to lattice mismatch in the layer interfaces.
Public/Granted literature
- US20160204036A1 MAKING A DEFECT FREE FIN BASED DEVICE IN LATERAL EPITAXY OVERGROWTH REGION Public/Granted day:2016-07-14
Information query
IPC分类:
