Invention Grant
- Patent Title: Quantum efficiency of multiple quantum wells
- Patent Title (中): 多量子阱的量子效率
-
Application No.: US14629487Application Date: 2015-02-23
-
Publication No.: US09583671B2Publication Date: 2017-02-28
- Inventor: Liang Wang , Ilyas Mohammed , Masud Beroz
- Applicant: Invensas Corporation
- Applicant Address: US CA San Jose
- Assignee: Invensas Corporation
- Current Assignee: Invensas Corporation
- Current Assignee Address: US CA San Jose
- Agency: Forefront IP Lawgroup of Christie & Rivera, pllc
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00 ; H01L33/06 ; H01L31/0352 ; H01L31/105 ; B82Y20/00 ; H01L33/32 ; H01L33/62 ; H01L29/06 ; H01L31/00 ; H01L33/24 ; H01S5/20 ; H01S5/34 ; H01S5/343 ; H01S5/32
Abstract:
Improved quantum efficiency of multiple quantum wells. In accordance with an embodiment of the present invention, an article of manufacture includes a p side for supplying holes and an n side for supplying electrons. The article of manufacture also includes a plurality of quantum well periods between the p side and the n side, each of the quantum well periods includes a quantum well layer and a barrier layer, with each of the barrier layers having a barrier height. The plurality of quantum well periods include different barrier heights.
Public/Granted literature
- US20150171265A1 QUANTUM EFFICIENCY OF MULTIPLE QUANTUM WELLS Public/Granted day:2015-06-18
Information query
IPC分类:
