发明授权
- 专利标题： Magnetic memory devices and methods of forming the same
- 专利标题（中）： 磁记忆装置及其形成方法
-
申请号： US14716913申请日： 2015-05-20
-
公开(公告)号： US09583697B2公开(公告)日： 2017-02-28
- 发明人: Keewon Kim , Minah Kang , Soonoh Park , Yong Sung Park , Sechung Oh
- 申请人： Keewon Kim , Minah Kang , Soonoh Park , Yong Sung Park , Sechung Oh
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel, P.A.
- 优先权： KR10-2014-0106110 20140814
- 主分类号： H01L43/08
- IPC分类号： H01L43/08 ; G11C11/16 ; H01L43/02 ; H01L43/12 ; H01L43/10 ; H01L27/22
摘要：
The inventive concepts provide magnetic memory devices and methods forming the same. The method includes sequentially forming a first magnetic conductive layer and a capping layer on a substrate, patterning the capping layer and the first magnetic conductive layer to form a first magnetic conductive pattern and a capping pattern, forming an interlayer insulating layer exposing the capping pattern on the substrate, removing the capping pattern to expose the first magnetic conductive pattern, forming a tunnel barrier layer and a second magnetic conductive layer on the first magnetic conductive pattern and the interlayer insulating layer, and patterning the second magnetic conductive layer and the tunnel barrier layer to form a second magnetic conductive pattern and a tunnel barrier pattern.
公开/授权文献
- US20160049581A1 MAGNETIC MEMORY DEVICES AND METHODS OF FORMING THE SAME 公开/授权日：2016-02-18
信息查询
IPC分类:
