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公开(公告)号:US09583697B2
公开(公告)日:2017-02-28
申请号:US14716913
申请日:2015-05-20
申请人: Keewon Kim , Minah Kang , Soonoh Park , Yong Sung Park , Sechung Oh
发明人: Keewon Kim , Minah Kang , Soonoh Park , Yong Sung Park , Sechung Oh
CPC分类号: H01L43/08 , G11C11/161 , H01L27/228 , H01L43/02 , H01L43/10 , H01L43/12
摘要: The inventive concepts provide magnetic memory devices and methods forming the same. The method includes sequentially forming a first magnetic conductive layer and a capping layer on a substrate, patterning the capping layer and the first magnetic conductive layer to form a first magnetic conductive pattern and a capping pattern, forming an interlayer insulating layer exposing the capping pattern on the substrate, removing the capping pattern to expose the first magnetic conductive pattern, forming a tunnel barrier layer and a second magnetic conductive layer on the first magnetic conductive pattern and the interlayer insulating layer, and patterning the second magnetic conductive layer and the tunnel barrier layer to form a second magnetic conductive pattern and a tunnel barrier pattern.
摘要翻译: 本发明构思提供磁存储器件及其形成方法。 该方法包括在衬底上顺序地形成第一导电层和覆盖层,对覆盖层和第一导电层进行构图以形成第一导电图案和封盖图案,形成将覆盖图案暴露在上的层间绝缘层 所述基板,去除所述封盖图案以露出所述第一导电图案,在所述第一导电图案和所述层间绝缘层上形成隧道势垒层和第二导电层,以及使所述第二导电层和所述隧道势垒层 以形成第二导电图案和隧道势垒图案。
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公开(公告)号:US20160049581A1
公开(公告)日:2016-02-18
申请号:US14716913
申请日:2015-05-20
申请人: Keewon Kim , Minah Kang , Soonoh Park , Yong Sung Park , Sechung Oh
发明人: Keewon Kim , Minah Kang , Soonoh Park , Yong Sung Park , Sechung Oh
CPC分类号: H01L43/08 , G11C11/161 , H01L27/228 , H01L43/02 , H01L43/10 , H01L43/12
摘要: The inventive concepts provide magnetic memory devices and methods forming the same. The method includes sequentially forming a first magnetic conductive layer and a capping layer on a substrate, patterning the capping layer and the first magnetic conductive layer to form a first magnetic conductive pattern and a capping pattern, forming an interlayer insulating layer exposing the capping pattern on the substrate, removing the capping pattern to expose the first magnetic conductive pattern, forming a tunnel barrier layer and a second magnetic conductive layer on the first magnetic conductive pattern and the interlayer insulating layer, and patterning the second magnetic conductive layer and the tunnel barrier layer to form a second magnetic conductive pattern and a tunnel barrier pattern.
摘要翻译: 本发明构思提供磁存储器件及其形成方法。 该方法包括在衬底上顺序地形成第一导电层和覆盖层,对覆盖层和第一导电层进行构图以形成第一导电图案和封盖图案,形成将覆盖图案暴露在上的层间绝缘层 所述基板,去除所述封盖图案以露出所述第一导电图案,在所述第一导电图案和所述层间绝缘层上形成隧道势垒层和第二导电层,以及使所述第二导电层和所述隧道势垒层 以形成第二导电图案和隧道势垒图案。
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