Invention Grant
US09589661B2 Method of programming memory device and method of reading data of memory device including the same
有权
编程存储器件的方法和读取包括其的存储器件的数据的方法
- Patent Title: Method of programming memory device and method of reading data of memory device including the same
- Patent Title (中): 编程存储器件的方法和读取包括其的存储器件的数据的方法
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Application No.: US14556107Application Date: 2014-11-29
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Publication No.: US09589661B2Publication Date: 2017-03-07
- Inventor: Kyung-Ryun Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2014-0032837 20140320
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C11/56 ; G06F11/07 ; G06F11/10 ; G11C16/12 ; G11C29/02 ; G11C29/42 ; G11C29/52 ; H03M13/05 ; H03M13/09 ; H03M13/19
Abstract:
A method of programming target memory cells of a nonvolatile memory device includes; programming the target memory cells using an incrementally adjusted program time, reading a code word stored by the target memory cells and determining a bit error rate (BER) associated with the target memory cells in view of the read code word, and if the BER exceeds an upper BER limit, increasing the program time by a unit time.
Public/Granted literature
- US20150270852A1 METHOD OF PROGRAMMING MEMORY DEVICE AND METHOD OF READING DATA OF MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2015-09-24
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