Invention Grant
US09590010B1 Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer
有权
垂直磁性隧道结（pMTJ）器件采用薄的钉扎层堆叠，并提供了一个向上反向平行（AP）层下方的体心立方（BCC）结晶/非晶结构的转变开始
- Patent Title: Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer
- Patent Title (中): 垂直磁性隧道结（pMTJ）器件采用薄的钉扎层堆叠，并提供了一个向上反向平行（AP）层下方的体心立方（BCC）结晶/非晶结构的转变开始
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Application No.: US15079634Application Date: 2016-03-24
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Publication No.: US09590010B1Publication Date: 2017-03-07
- Inventor: Matthias Georg Gottwald , Jimmy Jianan Kan , Chando Park , Xiaochun Zhu , Seung Hyuk Kang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Withrow & Terranova, PLLC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/22 ; H01L43/08 ; H01L43/10 ; H01L43/12 ; H01L43/02 ; G11C11/16
Abstract:
Perpendicular magnetic tunnel junction (pMTJ) devices employing a pinned layer stack with a thin top anti-parallel (AP2) layer and having a transitioning layer providing a transitioning start to a body-centered cubic (BCC) crystalline/amorphous structure below the top anti-parallel (AP2) layer, to promote a high tunnel magnetoresistance ratio (TMR) with reduced pinned layer thickness are disclosed. A first anti-parallel (AP) ferromagnetic (AP1) layer in a pinned layer has a face-centered cubic (FCC) or hexagonal closed packed (HCP) crystalline structure. A transitioning material (e.g., Iron (Fe)) is provided in a transitioning layer between the AP1 layer and an AFC layer (e.g., Chromium (Cr)) that starts a transition from a FCC or HCP crystalline structure, to a BCC crystalline/amorphous structure. In this manner, a second AP ferromagnetic (AP2) layer disposed on the AFC layer can be provided in a reduced thickness BCC crystalline or amorphous structure to provide a high TMR with a reduced pinned layer thickness.
Information query
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