Invention Grant
- Patent Title: Resist pattern-forming method and photoresist composition
- Patent Title (中): 抗蚀剂图案形成方法和光刻胶组合物
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Application No.: US14491445Application Date: 2014-09-19
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Publication No.: US09594303B2Publication Date: 2017-03-14
- Inventor: Hitoshi Osaki , Hayato Namai , Shinya Minegishi
- Applicant: JSR Corporation
- Applicant Address: JP Tokyo
- Assignee: JSR CORPORATION
- Current Assignee: JSR CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-062884 20120319
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/038 ; H01L21/027 ; G03F7/039 ; G03F7/32 ; G03F7/20 ; C08F220/26 ; C08F220/34 ; G03F7/11 ; C08F220/18
Abstract:
A resist pattern-forming method includes forming a resist film using a photoresist composition. The resist film is exposed. The exposed resist film is developed. The photoresist composition includes an acid generator and a polymer. The acid generator generates a protonic acid upon application of exposure light. The protonic acid generates a proton. The polymer includes a first structural unit which includes a first group. The first group and the proton form a cationic group. The polymer substantially does not include a structural unit which includes an acid-labile group.
Public/Granted literature
- US20150010866A1 RESIST PATTERN-FORMING METHOD AND PHOTORESIST COMPOSITION Public/Granted day:2015-01-08
Information query
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