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公开(公告)号:US11426761B2
公开(公告)日:2022-08-30
申请号:US17000727
申请日:2020-08-24
申请人: JSR CORPORATION
发明人: Hiroyuki Komatsu , Miki Tamada , Hitoshi Osaki , Tomoki Nagai
IPC分类号: B05D3/00 , B05D1/00 , B05D3/10 , B05D3/02 , C09D125/08 , C09D125/06 , C09D133/12 , C23C16/455
摘要: A modification method of a surface of a base includes applying a composition on a surface layer of a base to form a coating film. The surface layer contains a metal atom. The coating is heated. The composition contains a polymer and a solvent. The polymer includes at an end of a main chain or at an end of a side chain thereof, a functional group that is at least one selected from: a group represented by the following formula (1); a group containing a carbon-carbon triple bond; and a group containing an aromatic hydroxy group. In the formula (1), R1 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and n is an integer of 1 to 10, wherein in a case in which n is no less than 2, a plurality of R1s are identical or different.
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公开(公告)号:US20190235386A1
公开(公告)日:2019-08-01
申请号:US16376385
申请日:2019-04-05
申请人: JSR Corporation
IPC分类号: G03F7/11 , H01L21/308 , H01L21/027 , G03F7/16 , G03F7/20 , G03F7/32 , C08F112/08 , C08F212/08
摘要: A pattern-forming method includes forming a base pattern having recessed portions on a front face side of a substrate directly or via other layer. The recessed portions of the base pattern are filled with a first composition to form a filler layer. Phase separation of the filler layer is allowed to form a plurality of phases of the filler layer. A part of the plurality of phases of the filler layer is removed to form a miniaturized pattern. The forming of the base pattern includes: forming a resist pattern on the front face side of the substrate; forming a layer of a second polymer on lateral faces of the resist pattern; and forming a layer of a third polymer that differs from the second polymer on a surface of the substrate or on a surface of the other layer.
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公开(公告)号:US20190198317A1
公开(公告)日:2019-06-27
申请号:US16288385
申请日:2019-02-28
申请人: JSR CORPORATION
IPC分类号: H01L21/027 , C23C16/02 , H01L21/02 , H01L21/311 , C09D5/00 , C09D125/06 , C09D183/04 , C09D125/16 , C09D133/12 , C09D7/20
CPC分类号: H01L21/0271 , B05D3/02 , B05D7/00 , C09D5/008 , C09D7/20 , C09D125/06 , C09D125/16 , C09D133/12 , C09D183/04 , C23C16/0227 , H01L21/02118 , H01L21/02271 , H01L21/02282 , H01L21/02334 , H01L21/02359 , H01L21/3065 , H01L21/31133
摘要: A method for selectively modifying a base material surface, includes applying a composition on a surface of a base material to form a coating film. The coating film is heated. The base material includes a surface layer which includes a first region including silicon. The composition includes a first polymer and a solvent. The first polymer includes at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with the silicon. The first region preferably contains a silicon oxide, a silicon nitride, or a silicon oxynitride. The base material preferably further includes a second region that is other than the first region and that contains a metal; and the method preferably further includes, after the heating, removing with a rinse agent a portion formed on the second region, of the coating film.
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4.
公开(公告)号:US11460767B2
公开(公告)日:2022-10-04
申请号:US16239592
申请日:2019-01-04
申请人: JSR CORPORATION
IPC分类号: G03F7/00 , C08F212/08 , C08F212/14 , C08F220/12 , C08F220/14 , C09D201/02 , H01L21/027 , H01L21/308 , C09D133/10 , G03F7/38 , C09D153/00
摘要: A composition for film formation includes a polymer and a solvent. The polymer includes a first repeating unit, a second repeating unit, a third repeating unit, and a structural unit on at least one end of a main chain of the polymer. The first repeating unit includes a crosslinkable group. The second repeating unit differs from the first repeating unit. The third repeating unit differs from the first repeating unit and has higher polarity than polarity of the second repeating unit. The structural unit includes an interacting group capable of interacting with Si—OH, Si—H or Si—N.
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公开(公告)号:US10691019B2
公开(公告)日:2020-06-23
申请号:US16376385
申请日:2019-04-05
申请人: JSR CORPORATION
IPC分类号: G03F7/11 , H01L21/308 , H01L21/027 , C08F212/08 , G03F7/20 , G03F7/32 , C08F112/08 , G03F7/16 , G03F7/00 , G03F7/039 , G03F7/40 , G03F7/075
摘要: A pattern-forming method includes forming a base pattern having recessed portions on a front face side of a substrate directly or via other layer. The recessed portions of the base pattern are filled with a first composition to form a filler layer. Phase separation of the filler layer is allowed to form a plurality of phases of the filler layer. A part of the plurality of phases of the filler layer is removed to form a miniaturized pattern. The forming of the base pattern includes: forming a resist pattern on the front face side of the substrate; forming a layer of a second polymer on lateral faces of the resist pattern; and forming a layer of a third polymer that differs from the second polymer on a surface of the substrate or on a surface of the other layer.
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公开(公告)号:US09847232B1
公开(公告)日:2017-12-19
申请号:US15468772
申请日:2017-03-24
发明人: Hitoshi Osaki , Kristin Schmidt , Chi-Chun Liu
IPC分类号: H01L21/311 , G03F7/11 , G03F7/039 , G03F7/16 , G03F7/20 , G03F7/32 , H01L21/768
CPC分类号: H01L21/76802 , G03F7/0002 , G03F7/405 , H01L21/3086 , H01L21/76832
摘要: A pattern-forming method includes forming a base pattern having recessed portions on a front face side of a substrate. A first composition is applied on lateral faces of the recessed portions of the base pattern, to form a coating. The first composition includes a first polymer which includes on at least one end of a main chain thereof a group capable of interacting with the base pattern. A surface of the coating is contacted with a highly polar solvent. The recessed portions are filled with a second composition. The second composition includes a second polymer which is capable of forming a phase separation structure through directed self-assembly. Phase separation is permitted in the second composition to form phases. A part of the phases is removed to form a miniaturized pattern. The substrate is etched directly or indirectly using the miniaturized pattern as a mask.
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公开(公告)号:US10923342B2
公开(公告)日:2021-02-16
申请号:US16550695
申请日:2019-08-26
申请人: JSR CORPORATION
发明人: Hitoshi Osaki , Hiroyuki Komatsu
IPC分类号: H01L21/02
摘要: A selective modification method of a base material surface includes subjecting at least a part of a surface of a base material to at least one surface treatment selected from the group consisting of an oxidization treatment and a hydrophilization treatment. The base material includes a surface layer and includes an oxide, a nitride or an oxynitride of silicon, or a combination thereof in a first region of the surface layer. A nonphotosensitive composition is applied directly or indirectly on the surface of the base material after the surface treatment. The nonphotosensitive composition includes: a first polymer containing a nitrogen atom; and a solvent. It is preferred that the base material contains a metal in a second region which is other than the first region of the surface layer. In the surface treatment step, an O2 plasma treatment is preferably conducted.
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公开(公告)号:US10394121B2
公开(公告)日:2019-08-27
申请号:US16199767
申请日:2018-11-26
申请人: JSR Corporation
发明人: Hitoshi Osaki
IPC分类号: G03F7/00 , H01L21/311 , G03F7/40 , G03F7/038 , C09D133/06 , H01L21/3213 , H01L21/308 , C08L25/04 , H01L21/027 , G03F7/039 , C09D133/04 , C08L25/16
摘要: A composition includes two types of polymers each having a different weight average molecular weight. The two types of polymers are each a styrene polymer having a group which bonds to at least one end of a main chain and which includes at least one of a hydroxy group, a carboxy group, a sulfanyl group, an epoxy group, a cyano group, a vinyl group or a carbonyl group. A difference in weight average molecular weight between the two types of polymers is no less than 2,000 and no greater than 30,000.
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9.
公开(公告)号:US20190233561A1
公开(公告)日:2019-08-01
申请号:US16239592
申请日:2019-01-04
申请人: JSR CORPORATION
IPC分类号: C08F220/12 , C09D201/02 , H01L21/027 , C09D153/00 , G03F7/00
CPC分类号: C08F220/12 , C09D153/00 , C09D201/02 , G03F7/0002 , H01L21/027 , H01L21/3065
摘要: A composition for film formation includes a polymer and a solvent. The polymer includes a first repeating unit, a second repeating unit, a third repeating unit, and a structural unit on at least one end of a main chain of the polymer. The first repeating unit includes a crosslinkable group. The second repeating unit differs from the first repeating unit. The third repeating unit differs from the first repeating unit and has higher polarity than polarity of the second repeating unit. The structural unit includes an interacting group capable of interacting with Si—OH, Si—H or Si—N.
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公开(公告)号:US11705331B2
公开(公告)日:2023-07-18
申请号:US17148729
申请日:2021-01-14
申请人: JSR CORPORATION
IPC分类号: H01L21/027 , C08F112/08 , C09D125/06 , H01L21/28 , H01L21/321 , H01L21/285 , C08F8/00 , H01L21/02 , H01L21/311 , C08F120/14 , C08L25/06 , C08L33/10
CPC分类号: H01L21/0271 , C08F8/00 , C08F112/08 , C09D125/06 , H01L21/02118 , H01L21/02282 , H01L21/02334 , H01L21/02359 , H01L21/28 , H01L21/285 , H01L21/31133 , H01L21/321 , C08F120/14 , C08F2810/40 , C08L25/06 , C08L33/10 , C08L2203/206 , C08L2312/02 , C08F8/00 , C08F120/14 , C08F8/00 , C08F112/08
摘要: A composition for use in selective modification of a base material surface includes a polymer having, at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with a metal, and a solvent.
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