- 专利标题： Composition for pattern formation, and pattern-forming method
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申请号： US14668335申请日： 2015-03-25
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公开(公告)号： US09599892B2公开(公告)日： 2017-03-21
- 发明人: Hiroyuki Komatsu , Takehiko Naruoka , Shinya Minegishi , Tomoki Nagai
- 申请人： JSR CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： JSR CORPORATION
- 当前专利权人： JSR CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2014-070198 20140328
- 主分类号： G03F7/00
- IPC分类号： G03F7/00 ; G03F7/20 ; G03F7/38 ; G03F7/40 ; G03F7/36 ; H01L21/027 ; G03F7/32 ; C08K5/42 ; H01L21/311 ; C08F297/02 ; C08L53/00
摘要：
A composition for pattern formation includes a block copolymer and a solvent. The block copolymer includes a group including a reactive group on at least one end of a main chain of the block copolymer. A pattern-forming method includes providing a directed self-assembling film directly or indirectly on a substrate using the composition. The directed self-assembling film includes a phase separation structure which includes a plurality of phases. A part of the plurality of phases of the directed self-assembling film is removed.