Invention Grant
- Patent Title: Temperature compensation for MEMS devices
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Application No.: US14029927Application Date: 2013-09-18
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Publication No.: US09602026B2Publication Date: 2017-03-21
- Inventor: Emmanuel P. Quevy , Daniel N. Koury, Jr.
- Applicant: Silicon Laboratories Inc.
- Applicant Address: US TX Austin
- Assignee: Silicon Laboratories Inc.
- Current Assignee: Silicon Laboratories Inc.
- Current Assignee Address: US TX Austin
- Agency: Zagorin Cave LLP
- Main IPC: H02N1/00
- IPC: H02N1/00 ; H03B5/30 ; H03L1/02 ; H03H3/013 ; H03H9/02 ; B81B3/00 ; H03L1/04 ; H03H7/00 ; H03H9/24

Abstract:
A microelectromechanical system (MEMS) device includes a temperature compensating structure including a first beam suspended from a substrate and a second beam suspended from the substrate. The first beam is formed from a first material having a first Young's modulus temperature coefficient. The second beam is formed from a second material having a second Young's modulus temperature coefficient. The body may include a routing spring suspended from the substrate. The routing spring may be coupled to the first beam and the second beam. The routing spring may be formed from the second material. The first beam and the second beam may have lower spring compliance than the routing spring. The MEMS device may be a resonator and the temperature compensating structure may have dimensions and a location such that the temperature compensation structure modifies a temperature coefficient of frequency of the resonator independent of a mode shape of the resonator.
Public/Granted literature
- US20140361661A1 TEMPERATURE COMPENSATION FOR MEMS DEVICES Public/Granted day:2014-12-11
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