公开(公告)号：US20140361843A1

公开(公告)日：2014-12-11

申请号：US13941278

申请日：2013-07-12

Applicant: Silicon Laboratories Inc.

Inventor： Emmanuel P. Quevy ,  Daniel N. Koury, Jr.

IPC: H03B5/30 ,  H03L1/02

CPC classification number: H02N1/00 ,  B81B3/0081 ,  H03B5/30 ,  H03H3/013 ,  H03H9/02259 ,  H03H2007/006 ,  H03H2009/02291 ,  H03H2009/02385 ,  H03H2009/0248 ,  H03H2009/2442 ,  H03L1/02 ,  H03L1/04 ,  Y10T29/49005 ,  Y10T29/49117

Abstract: A technique decouples a MEMS device from sources of strain by forming a MEMS structure with suspended electrodes that are mechanically anchored in a manner that reduces or eliminates transfer of strain from the substrate into the structure, or transfers strain to electrodes and body so that a transducer is strain-tolerant. The technique includes using an electrically insulating material embedded in a conductive structural material for mechanical coupling and electrical isolation.

Abstract translation: 一种技术通过形成具有悬挂电极的MEMS结构来将MEMS器件与应变源解耦，所述悬置电极机械地锚定以减少或消除应变从衬底转移到结构中的方式，或将应变传递到电极和体，使得换能器 是耐应变的。 该技术包括使用嵌入导电结构材料中的电绝缘材料进行机械耦合和电隔离。

公开(公告)号：US09300227B2

公开(公告)日：2016-03-29

申请号：US13941278

申请日：2013-07-12

Applicant: Silicon Laboratories Inc.

Inventor： Emmanuel P. Quevy ,  Daniel N. Koury, Jr.

IPC: H03B5/30 ,  H02N1/00 ,  H03L1/02 ,  H03H3/013 ,  H03H9/02 ,  H03H7/00 ,  H03H9/24

CPC classification number: H02N1/00 ,  B81B3/0081 ,  H03B5/30 ,  H03H3/013 ,  H03H9/02259 ,  H03H2007/006 ,  H03H2009/02291 ,  H03H2009/02385 ,  H03H2009/0248 ,  H03H2009/2442 ,  H03L1/02 ,  H03L1/04 ,  Y10T29/49005 ,  Y10T29/49117

Abstract: A technique decouples a MEMS device from sources of strain by forming a MEMS structure with suspended electrodes that are mechanically anchored in a manner that reduces or eliminates transfer of strain from the substrate into the structure, or transfers strain to electrodes and body so that a transducer is strain-tolerant. The technique includes using an electrically insulating material embedded in a conductive structural material for mechanical coupling and electrical isolation.

Abstract translation: 一种技术通过形成具有悬挂电极的MEMS结构来将MEMS器件与应变源解耦，所述悬置电极机械地锚定以减少或消除应变从衬底转移到结构中的方式，或将应变传递到电极和体，使得换能器 是耐应变的。 该技术包括使用嵌入导电结构材料中的电绝缘材料进行机械耦合和电隔离。

公开(公告)号：US09246412B2

公开(公告)日：2016-01-26

申请号：US14029931

申请日：2013-09-18

Applicant: Silicon Laboratories Inc.

Inventor： Emmanuel P. Quevy ,  Daniel N. Koury, Jr.

IPC: H03L1/02 ,  H02N1/00 ,  H03B5/30 ,  H03H3/013 ,  H03H9/02 ,  B81B3/00 ,  H03L1/04 ,  H03H7/00 ,  H03H9/24

CPC classification number: H02N1/00 ,  B81B3/0081 ,  H03B5/30 ,  H03H3/013 ,  H03H9/02259 ,  H03H2007/006 ,  H03H2009/02291 ,  H03H2009/02385 ,  H03H2009/0248 ,  H03H2009/2442 ,  H03L1/02 ,  H03L1/04 ,  Y10T29/49005 ,  Y10T29/49117

Abstract: A technique decouples a MEMS device from sources of strain by forming a MEMS structure with suspended electrodes that are mechanically anchored in a manner that reduces or eliminates transfer of strain from the substrate into the structure, or transfers strain to electrodes and body so that a transducer is strain-tolerant. The technique includes using an electrically insulating material embedded in a conductive structural material for mechanical coupling and electrical isolation. An apparatus includes a MEMS device including a first electrode and a second electrode, and a body suspended from a substrate of the MEMS device. The body and the first electrode form a first electrostatic transducer. The body and the second electrode form a second electrostatic transducer. The apparatus includes a suspended passive element mechanically coupled to the body and electrically isolated from the body.

Abstract translation: 一种技术通过形成具有悬挂电极的MEMS结构来将MEMS器件与应变源解耦，所述悬置电极机械地锚定以减少或消除应变从衬底转移到结构中的方式，或将应变传递到电极和体，使得换能器 是耐应变的。 该技术包括使用嵌入导电结构材料中的电绝缘材料进行机械耦合和电隔离。 一种装置包括包括第一电极和第二电极以及从MEMS器件的衬底悬挂的主体的MEMS器件。 主体和第一电极形成第一静电换能器。 主体和第二电极形成第二静电换能器。 该装置包括机械耦合到主体并与主体电隔离的悬置的被动元件。

公开(公告)号：US09602026B2

公开(公告)日：2017-03-21

申请号：US14029927

申请日：2013-09-18

Applicant: Silicon Laboratories Inc.

Inventor： Emmanuel P. Quevy ,  Daniel N. Koury, Jr.

IPC: H02N1/00 ,  H03B5/30 ,  H03L1/02 ,  H03H3/013 ,  H03H9/02 ,  B81B3/00 ,  H03L1/04 ,  H03H7/00 ,  H03H9/24

CPC classification number: H02N1/00 ,  B81B3/0081 ,  H03B5/30 ,  H03H3/013 ,  H03H9/02259 ,  H03H2007/006 ,  H03H2009/02291 ,  H03H2009/02385 ,  H03H2009/0248 ,  H03H2009/2442 ,  H03L1/02 ,  H03L1/04 ,  Y10T29/49005 ,  Y10T29/49117

Abstract: A microelectromechanical system (MEMS) device includes a temperature compensating structure including a first beam suspended from a substrate and a second beam suspended from the substrate. The first beam is formed from a first material having a first Young's modulus temperature coefficient. The second beam is formed from a second material having a second Young's modulus temperature coefficient. The body may include a routing spring suspended from the substrate. The routing spring may be coupled to the first beam and the second beam. The routing spring may be formed from the second material. The first beam and the second beam may have lower spring compliance than the routing spring. The MEMS device may be a resonator and the temperature compensating structure may have dimensions and a location such that the temperature compensation structure modifies a temperature coefficient of frequency of the resonator independent of a mode shape of the resonator.