- Patent Title: Method for performing deep n-typed well-correlated (DNW-correlated) antenna rule check of integrated circuit and semiconductor structure complying with DNW-correlated antenna rule
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Application No.: US14598236Application Date: 2015-01-16
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Publication No.: US09607123B2Publication Date: 2017-03-28
- Inventor: Xing Hua Zhang , Chi-Fa Ku , Hong Liao , Ye Chao Li , Hui Yang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L23/58 ; H01L21/66 ; H01L23/528 ; H01L21/8238 ; H01L27/02 ; H01L23/10 ; H01L27/06 ; H01L23/00
Abstract:
A semiconductor monitoring device includes a substrate, a die seal ring formed on the substrate, a deep n-typed well formed in the substrate under the die seal ring, and a monitoring device electrically connected to the die seal ring. The monitoring device is formed in a scribe line region defined on the substrate. A width of the deep n-typed well is larger than a width of the die seal ring.
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