公开(公告)号：US09331200B1

公开(公告)日：2016-05-03

申请号：US14590008

申请日：2015-01-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Lanxiang Wang ,  Hong Liao ,  Chao Jiang ,  Duan Quan Liao ,  Ye Chao Li

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/417 ,  H01L29/161 ,  H01L29/45

CPC classification number: H01L29/7848 ,  H01L29/161 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/66568 ,  H01L29/66636

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a gate structure thereon; and forming a first epitaxial layer, a second epitaxial layer, and a silicide layer in the substrate adjacent to the gate structure. Preferably, the first epitaxial layer, the second epitaxial layer, and the silicide layer comprise SiGeSn.

Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供其上具有栅极结构的衬底; 以及在与栅极结构相邻的衬底中形成第一外延层，第二外延层和硅化物层。 优选地，第一外延层，第二外延层和硅化物层包括SiGeSn。

公开(公告)号：US09607123B2

公开(公告)日：2017-03-28

申请号：US14598236

申请日：2015-01-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Xing Hua Zhang ,  Chi-Fa Ku ,  Hong Liao ,  Ye Chao Li ,  Hui Yang

IPC: G06F17/50 ,  H01L23/58 ,  H01L21/66 ,  H01L23/528 ,  H01L21/8238 ,  H01L27/02 ,  H01L23/10 ,  H01L27/06 ,  H01L23/00

CPC classification number: G06F17/5081 ,  H01L21/823871 ,  H01L22/34 ,  H01L23/10 ,  H01L23/528 ,  H01L23/562 ,  H01L23/58 ,  H01L27/0266 ,  H01L27/0629 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor monitoring device includes a substrate, a die seal ring formed on the substrate, a deep n-typed well formed in the substrate under the die seal ring, and a monitoring device electrically connected to the die seal ring. The monitoring device is formed in a scribe line region defined on the substrate. A width of the deep n-typed well is larger than a width of the die seal ring.

公开(公告)号：US20160211187A1

公开(公告)日：2016-07-21

申请号：US14598236

申请日：2015-01-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Xing Hua Zhang ,  Chi-Fa Ku ,  Hong Liao ,  Ye Chao Li ,  Hui Yang

IPC: H01L21/66 ,  H01L23/10 ,  H01L23/528 ,  G06F17/50

CPC classification number: G06F17/5081 ,  H01L21/823871 ,  H01L22/34 ,  H01L23/10 ,  H01L23/528 ,  H01L23/562 ,  H01L23/58 ,  H01L27/0266 ,  H01L27/0629 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor monitoring device includes a substrate, a die seal ring formed on the substrate, a deep n-typed well formed in the substrate under the die seal ring, and a monitoring device electrically connected to the die seal ring. The monitoring device is formed in a scribe line region defined on the substrate. A width of the deep n-typed well is larger than a width of the die seal ring.

Abstract translation: 半导体监视装置包括基板，形成在基板上的模具密封环，形成在模具密封环下方的基板中的深n型阱，以及与模密封环电连接的监视装置。 监测装置形成在限定在基板上的划线区域中。 深n型井的宽度大于模具密封环的宽度。