Invention Grant
- Patent Title: High density plasma reactor with multiple top coils
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Application No.: US14207468Application Date: 2014-03-12
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Publication No.: US09607809B2Publication Date: 2017-03-28
- Inventor: Chi-Ching Lo , Po-Hsiung Leu , Tzu-Chun Lin , Ding-I Liu , Jen-Chi Chang , Ho-Ta Chuang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H01J37/32 ; C23C16/507

Abstract:
A plasma reactor includes an enclosure having a top and a bottom and defining a processing chamber. Inlets are formed in the enclosure for injecting process gas into the chamber. An outlet is formed in the enclosure for withdrawing gas from the chamber. A platform is positioned to support a wafer in the chamber above the bottom. A plurality of coils is positioned above the top of the chamber. Each coil is coupled to a radio frequency generator.
Public/Granted literature
- US20140273537A1 HIGH DENSITY PLASMA REACTOR WITH MULTIPLE TOP COILS Public/Granted day:2014-09-18
Information query
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